Trench type power transistor device

a power transistor and clamping technology, applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problems of lowering device performance, high miller capacitance, inevitable switching losses, etc., and achieve the effect of reducing the capacitance and switching losses of the device and improving the performance of the devi
US20140327039A1Inactive Publication Date: 2014-11-06ANPEC ELECTRONICS CORPORATION
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
ANPEC ELECTRONICS CORPORATION
Publication Date
2014-11-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provides a trench type power transistor device including a substrate, an epitaxial layer, a doped diffusion region, a doped source region, and a gate structure. The substrate, the doped diffusion region, and the doped source region have a first conductivity type, and the substrate has an active region and a termination region. The epitaxial layer is disposed on the substrate, and has a second conductivity type. The epitaxial layer has a through hole disposed in the active region. The doped diffusion region is disposed in the epitaxial layer at a side of the through hole, and is in contact with the substrate. The doped source region is disposed in the epitaxial layer disposed right on the doped diffusion region, and the gate structure is disposed in the through hole between the doped diffusion region and the doped source region.
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Description

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is a divisional application of and claims the benefit of U.S. patent application Ser. No. 13 / 543,877, filed Jul. 8, 2012.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention generally relates to the field of semiconductor power devices. More particularly, the present invention relates to a trench type power transistor device having super-junction structures and a method thereof.

[0004] 2. Description of the Prior Art

[0005] Power devices are used in power management; for example, in switchable power supplies, management integrated circuits in the core or in the peripheral region of computers, backlight power supplies, and in electric motor controls. The type of power devices described above include an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field effect transistor (MOSFET), a bipolar junction transistor (BJT) and so forth.

[0006] Please refer to FIG. 1, which is a s...

Claims

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