Manufacturing method of TFT substrate structure

Abstract

The present invention provides a manufacturing method of a TFT substrate structure, which includes sequentially forming a first passivation layer, a planarization layer, and a first transparent conductive film and then first subjecting the first transparent conductive film to patterning to form a first pixel electrode and thereafter, a photolithographic process is applied to the planarization layer for exposure and thus forming a first via located above and corresponding to a drain terminal, followed by using the planarization layer as a self-aligning mask to apply dry etching to the first passivation layer for etching to form a second via that corresponds to the first via, whereby residues of the first transparent conductive film in the first and second vias can be effectively prevented and product yield is enhanced. Further, on mask can be saved to prevent reduction of aperture ratio caused by misalignment thereby improving the production efficiency, reducing production cost, and increasing cost-related competition power of products.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to the field of display technology, and in particular to a manufacturing method of a thin-film-transistor (TFT) substrate structure.[0003]2. The Related Arts[0004]A liquid crystal display (LCD) comprises an enclosure, a liquid crystal panel arranged in the enclosure, and a backlight module mounted in the enclosure. The liquid crystal panel is generally composed of a color filter (CF) substrate, a thin-film transistor (TFT) array substrate, and a liquid crystal layer filled between the two substrates. The CF substrate and the TFT substrate have inner surfaces facing each other and provided with transparent electrodes. The liquid crystal display is operated by providing an electric field to control the direction of liquid crystal molecules in order to change the state of polarization, and polarizers are involved to selectively to allow an optic path to pass or be blocked to thereby achieve th...

AI Technical Summary

Benefits of technology

The present invention provides a manufacturing method for a TFT substrate structure that effectively eliminates residues of a first transparent conductive film in vias, improving the production efficiency and reducing production cost. This method includes sequentially forming layers and then patterning the first transparent conductive film to form a first pixel electrode. A photolithographic process is used to create a first via above the drain terminal, and the planarization layer is used as a mask to apply dry etching to the first passivation layer for etching to form a second via that corresponds to the first via. This method prevents residues in the vias and improves production efficiency, reducing production cost and increasing cost-related competition power of products.

Problems solved by technology

wherein since the portion of the first transparent conductive film located in the first and second vias 810, 910 may be covered by residues of the photoresist, it may not be completely removed in the etching process and the portion of first transparent conductive film may be left in the first and second vias 810, 910 and may thus affect a subsequent operation, leading to a negative influence on the quality of the TFT substrate.

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