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Source Driving Device with 3 Types of Gate Oxide Layer

a technology of gate oxide layer and driving device, which is applied in the direction of semiconductor devices, instruments, electrical apparatus, etc., can solve the problems of inherently limited performance of the circuit operating within the medium voltage range of the conventional source driver ic, and achieve the effect of largely improving the performance of the circuit operating within the medium voltage rang

Active Publication Date: 2018-02-15
NOVATEK MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a method of designing circuit components that operate at different voltages. Instead of using components designed for high voltage ranges, the present invention uses components with unique gate oxide thickness for the circuits that operate within the medium voltage range. This results in improved performance for these circuits.

Problems solved by technology

Because the component structure of the circuit components of the high voltage range is not designed for operating within the medium voltage range, the performances of the circuits operating within the medium voltage range in the conventional source driver IC are inherently limited.

Method used

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  • Source Driving Device with 3 Types of Gate Oxide Layer
  • Source Driving Device with 3 Types of Gate Oxide Layer
  • Source Driving Device with 3 Types of Gate Oxide Layer

Examples

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Embodiment Construction

[0012]Please refer to FIG. 1, which is a schematic diagram of a source driving device 10 according to an example of the present invention. The source driving device 10 maybe a source driver in a display system, such as a liquid crystal display (LCD), a smart phone, a tablet or an electronic product with a liquid crystal display panel. As shown in FIG. 1, the source driving device 10 comprises a receiving module 100, a register module 102, a latch module 104, a level shifting module 106, a converting module 108, a buffer module 110, and an output switch module 112. The source driving device 10 is utilized to receive digital display data DD_D and accordingly generate source driving signals SD1-SDn of driving pixels in a display device (e.g. a display panel) of the display system. In this example, the source driving device 10 consists of circuit components (e.g. metal-oxide-semiconductor field-effect transistors (MOSFETs)) equipping with 3 different gate oxide thicknesses and different...

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Abstract

A source driving device for a display system includes a receiving module, for receiving display data; a register module, for sorting pixel data included in the display data to generate sorted pixel data; a latch module, for outputting sequenced display data to the level shifting module; a level shifting module, for adjusting the sequenced display data from a low voltage range to a medium voltage range; a converting module; for converting the sequenced display data to analog display voltages; a buffer module, for generating a plurality source driving signals according to the analog display voltages; and an output switching module, for outputting the plurality source driving signals to a display device of the display system operating in a high voltage range; wherein circuit components in the source driving device operating in different voltage ranges have different gate oxide thicknesses.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 62 / 372,760 filed on 2016 Aug. 2009, the contents of which are incorporated herein in their entirety.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The present invention relates to a source driving device, and more particularly, to a source driving device with 3 types of gate oxide layer.2. Description of the Prior Art[0003]The integrated circuit (IC), also called the mother of information technology (IT) industry, is the most basic and the most important components in the IT products. The IC is realized by configuring circuit components such as transistors, diodes, resistors and capacitors on a silicon chip, to form a complete logic circuit, so as to achieve functions of controlling, calculating and memorizing and to handle various affairs for people.[0004]According to different applications, the integrated circuits may comprise circuit components operating...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G09G3/36
CPCG09G3/3648G09G3/3696G09G3/3688G09G2300/04H01L21/823462H01L27/088H01L27/1237H01L27/1259
Inventor HSU, YU-HAOLIN, JUI-CHANGLEE, MING-HANLIN, WEI-CHENG
Owner NOVATEK MICROELECTRONICS CORP