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Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

Inactive Publication Date: 2018-04-05
JAPAN ADVANCED INST OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an etching mask for screen printing that can function effectively as an etching mask and can be easily removed by heating. This simplifies the manufacturing process of various devices such as semiconductor elements and electronic devices. Additionally, the invention also provides methods for producing an oxide layer using the etching mask, where the mask can be removed after formation of the pattern of the oxide layer by the heating step.

Problems solved by technology

However, when a polycrystalline silicon film is used, electron scattering at the polycrystalline grain boundary limits electron mobility, so as to cause variation in transistor property.
When an amorphous silicon film is used, electron mobility is very low and an element tends to deteriorate with time, so as to cause extremely low element reliability.

Method used

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  • Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor
  • Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor
  • Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

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Experimental program
Comparison scheme
Effect test

first embodiment

[0077]1. Etching Mask Precursor, Configurations of Etching Mask, and Method of Producing these

[0078]The “etching mask precursor” according to this embodiment is in a state where aliphatic polycarbonate (which may include inevitable impurities. The same shall apply hereafter) is dissolved in a certain solvent (typically an organic solvent). Further, the “etching mask” according to this embodiment is in a state (typically a “gel state”) where the solvent has been removed by heating the etching mask precursor thereof to an extent where it can be used for screen printing.

[0079]The etching mask precursor or etching mask according to this embodiment mainly includes aliphatic polycarbonate, but may include a compound, composition, or material other than aliphatic polycarbonate. It is noted that there is no particular limitation for the lower limit of the content of aliphatic polycarbonate in the etching mask precursor or etching mask, but the mass percentage of aliphatic polycarbonate to t...

experimental example 1

[0123]As examples of aliphatic polycarbonate, samples of the etching mask precursors in which at least one of 4 types of PPCs having different mass-average molecular weights was dissolved were prepared as shown in the following (1) to (10). It is noted that each of the following mass-average molecular weights represents values for aliphatic polycarbonate only.

[0124](1) Only a PPC having mass-average molecular weight of 30000 (hereinafter may also be referred to as “Sample A”)

[0125](2) Only a PPC having mass-average molecular weight of 90000 (hereinafter may also be referred to as “Sample B”)

[0126](3) A 1:1 mixture of Sample A and Sample B (hereinafter may also referred to as “Sample AB”)

[0127](4) Only a PPC having mass-average molecular weight of 230000 (hereinafter may also be referred to as “Sample C”)

[0128](5) Only a PPC having mass-average molecular weight of 590000 (hereinafter may also be referred to as “Sample D”)

[0129](6) A 1:1 mixture of Sample C and Sample D (hereinafter m...

experimental example 2

[0158]Next, in the following experiment, the inventors of this application measured the average length of drawn out strands (mm) and zero-shear viscosity (Pa·s) of the samples (1) to (10) used in experimental example 1.

[0159]In this experiment, first, regarding the average length of drawn-out strands (mm), a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” of 2.9 mm was dipped in a collection of aliphatic polycarbonate, which had been formed using each sample, within a container. When the cylindrical bar was then raised at a velocity “v” of 5 mm / second, and then the length “L” (mm) of a strand drawn out from the outermost surface of the collection of the aliphatic polycarbonate was measured. In addition, the zero-shear viscosity η of each sample was measured using a rheometer (TA Instruments, AR-2000EX). Each of the above values was substituted as an evaluation parameter into the following formula for calculation.

“Evaluation parameter” (mm−1·Pa−1)=L / (D×v×η) ...

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Abstract

The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.

Description

TECHNICAL FIELD[0001]The present invention relates to a method of producing an etching mask, an etching mask precursor, and an oxide layer, and a method of producing a thin film transistor.BACKGROUND ART[0002]Conventionally, a polycrystalline silicon film or an amorphous silicon film has typically been adopted as a channel layer of a thin film transistor, which is an example of an electronic device. However, when a polycrystalline silicon film is used, electron scattering at the polycrystalline grain boundary limits electron mobility, so as to cause variation in transistor property. When an amorphous silicon film is used, electron mobility is very low and an element tends to deteriorate with time, so as to cause extremely low element reliability. In this regard, an oxide semiconductor has been attracting interests, which is higher in electron mobility than an amorphous silicon film and has less variation in transistor property than a polycrystalline silicon film. Moreover, not only ...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01L21/308H01L29/786
CPCH01L21/3065H01L21/3086H01L29/786H01L29/66969H01L29/7869H01L27/1288H01L21/02205H01L21/31144H01L21/324
Inventor INOUE, SATOSHISHIMODA, TATSUYAFUKADA, KAZUHIRONISHIOKA, KIYOSHIFUJIMOTO, NOBUTAKASUZUKI, MASAHIRO
Owner JAPAN ADVANCED INST OF SCI & TECH