Optically excited microwave impedance microscopy

a microwave impedance and microscopy technology, applied in the field of material measurement systems, can solve the problems of inconvenient use, fragile, complex, etc., and achieve the effect of reducing the spatial resolution of optical techniques, and avoiding the use of sensitive instruments

Active Publication Date: 2018-08-02
PRIMENANO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a material characterization system that combines atomic force microscopy (AFM), microwave impedance measurement, and a modulated light beam to measure characteristics of a sample. The system uses the AFM probe tip as an electrode and detects the microwave signals reflected or generated in the sample. The system also uses a bluter tip and a trigger generator to measure the decay or other time profile of the reflected signal. Additionally, the system measures the non-linear characteristics of the sample using a modulated light irradiation and demodulates the detected microwave signals using a difference frequency. The invention has applications in various fields such as plastics and electronics.

Problems solved by technology

Their microwave probe tips tend to be relatively blunt, fragile, and complex and are not beneficially used in a mechanical AFM designed for topographic profiling.
However, the spatial resolution of optical techniques is usually limited by the size of the beam illuminating the sample, typically on the order of microns or larger.

Method used

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  • Optically excited microwave impedance microscopy
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Examples

Experimental program
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first embodiment

[0031]In the invention illustrated in FIG. 1, a light source 80 outputs a beam through optics 82 to irradiate a portion of the sample 18 surrounding the probe tip electrode 14. In one embodiment, the light source 80 is temporally modulated by a modulating electrical source 84 through a light source controller 88. For infrared absorption, the light source 80 is preferably a tunable infrared laser outputting a laser beam at selectable wavelengths in the 3 to 12 micrometer range as controlled by the light source controller 88 under the direction of the system controller 20.

[0032]The frequency of the modulating source 80 and indeed its waveform can be widely chosen depending upon the configuration of the rest of the system. Its frequency or other time characteristic may be used to demodulate the detected microwave signal. The modulation frequency may be off the resonant cantilever frequency, for example 100 kHz, although other frequencies may be chosen, for example 10 kHz to 500 kHz but...

second embodiment

[0044]Carrier lifetime is an important measure of the quality of a semiconductor. Its measurement with nanoscale resolution of the semiconductor structure would be highly informative. In the invention, FIG. 3 illustrates a block diagram of an optically excited lifetime microwave microscope system 90. Most of its parts have been described with reference to FIG. 1. However, the temporal modulation of the laser light source 80 is pulsed with a pulse width ranging, for example, from 10 ns to 10 ms and controlled by trigger generator 92 connected to the light source controller 88 through a closed switch 94 on a line 96. Once the laser light source 80 has irradiated the sample 18 and particularly after the light pulse has ended, two data acquisition units 98, 100 are triggered by the trigger generator 72 to sample the I and Q outputs of the microwave circuitry 42 to provide a time profile of these signals. Their decay times after the light pulse are indicative of the lifetimes of the elec...

third embodiment

[0046]the invention, illustrated in the simplified block diagram of FIG. 4 for an optically driven microwave microscope system 110, is fundamentally electrically passive and does not require that a microwave signal be electrically applied to the sample. The output of the laser 80, preferably tunable in the range of 1500 to 800 cm−1, having an infrared optical frequency fIR, is modulated in an optical modulator 112 according to a microwave reference signal from the microwave source 40 operating at fMW, which may be 3 GHz. The infrared range is centered at about 10 μm so that the optical or infrared signal frequency fIR is about 4 orders of magnitude greater than the microwave frequency fMW. The optical modulator 110 produces a signal which is the product of the optical and microwave signals which has two sidebands at frequencies fIR±fMW.

[0047]The optics 82 focus the modulated beam including its sidebands to an area of the sample 18 surrounding the electrode tip 14 and typically to th...

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Abstract

A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Description

FIELD OF THE INVENTION[0001]The invention relates generally to material measurement systems. In particular, the invention relates to atomic force microscopy.BACKGROUND ART[0002]Electrical measurement systems and techniques have long been used to characterize the properties of bulk materials, for example, resistivity, permittivity and permeability. These techniques have been adapted to measure characteristics of surfaces and thin films and have been combined with optical techniques for measuring further properties such as semiconductor type and concentrations and chemical bonding. Attempts to apply these electrical and optical techniques to the fine surface structures developed in semiconductor integrated circuits (ICs) has been stymied by the small scale of modern IC features, typically well below 100 nm, such that most measurement probes and beams average over the different features of the IC. Atomic force microscopy has been developed to profile the topography of a specimen with a...

Claims

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Application Information

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IPC IPC(8): G01Q60/24
CPCG01Q60/24G01Q60/30
InventorFRIEDMAN, STUART L.KELLY, MICHAEL M.
OwnerPRIMENANO