Colored photosensitive resin composition and multilayer cured film prepared therefrom

Pending Publication Date: 2022-05-26
ROHM & HAAS ELECTRONICS MATERIALS KOREA LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012]The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE/RSCI), and has a uniform film thickness in an appropria

Problems solved by technology

For example, if the film is not uniform or the film thickness is too small, it is not suitable for barrier ribs, so that the quantum dot solution may overflow the barrier ribs, resulting in mixing of colors or deterioration in the resolution due to poor color

Method used

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  • Colored photosensitive resin composition and multilayer cured film prepared therefrom
  • Colored photosensitive resin composition and multilayer cured film prepared therefrom
  • Colored photosensitive resin composition and multilayer cured film prepared therefrom

Examples

Experimental program
Comparison scheme
Effect test

example

Preparation Example 1: Preparation of a First Copolymer (A1-1)

[0248]A 500-ml, round-bottomed flask equipped with a refluxing condenser and a stirrer was charged with 100 g of a monomer mixture composed of 23% by mole of methacrylic acid, 43% by mole of styrene, 9% by mole of glycidyl methacrylate, and 25% by mole of methyl methacrylate, along with 2 g of 2,2′-azobis(2,4-dimethylvaleronitrile) as a radical polymerization initiator, which mixture was dissolved in 300 g of propylene glycol monomethyl ether acetate (PGMEA). Thereafter, the liquid mixture was heated to 70° C. and stirred for 5 hours for polymerization to obtain a copolymer A1-1 having a solids content of 31% by weight. The copolymer A1-1 thus prepared had a weight average molecular weight of 12,000 Da, an acid value of 100 mg KOH / g, and a polydispersity (Mw / Mn) of 2.80.

preparation example 2

t Copolymer (A1-2)

[0249]The same procedures as in Preparation Example 1 were carried out to prepare a copolymer A1-2 having a solids content of 31% by weight, except that the kinds and contents of the monomers were changed as shown in Table 1 below. The copolymer A1-2 thus prepared had a weight average molecular weight of 14,000 Da, an acid value of 100 mg KOH / g, and a polydispersity (Mw / Mn) of 2.48.

preparation example 3

nd Copolymer (A2-1)

[0250]The same procedures as in Preparation Example 1 were carried out to prepare a copolymer A2-1 having a solids content of 31% by weight, except that the kinds and contents of the monomers were changed as shown in Table 2 below. The copolymer A2-1 thus prepared had a weight average molecular weight of 14,100 Da, an acid value of 100 mg KOH / g, and a polydispersity (Mw / Mn) of 3.23.

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Abstract

The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE/RSCI), and has a uniform film thickness in an appropriate range. Thus, it can be formed into a multilayer cured film that simultaneously satisfies such physical properties as a high reflectance and a high light-shielding property. In addition, when a cured film is formed from the composition, it is possible to form a pattern on a multilayer film in a single development process. Thus, it can be advantageously used for a quantum dot display device.

Description

TECHNICAL FIELD[0001]The present invention relates to a colored photosensitive resin composition having excellent light-shielding property and reflectance to be applicable as quantum dot barrier ribs and to a multilayer cured film for quantum dot barrier ribs prepared from the composition.BACKGROUND ART[0002]In recent years, interest in various electronic devices employing quantum dots (QDs) has increased.[0003]Quantum dots are a material that produces an effect of quantum confinement as a nanocrystal of a semiconductor material having a diameter of approximately 10 nm or less. Although they are composed of hundreds of thousands of electrons or more, most electrons are firmly bound to the atomic nucleus, so that the number of free electrons that are not bound is limited to about 1 to 100. In such an event, the energy level of the electrons is discontinuously limited to show electrical and optical characteristics different from those of a semiconductor in a bulk state that forms a co...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/32G03F7/40G03F7/20G03F7/004G03F7/16G03F7/18G03F7/38
CPCG03F7/0392G03F7/322G03F7/40G03F7/2006G03F7/38G03F7/168G03F7/18G03F7/162G03F7/0045G03F7/004G03F7/027G03F7/09G03F7/105G03F7/033G03F7/038
Inventor KIM, SEUNG-KEUNPARK, KYUNG-JAE
Owner ROHM & HAAS ELECTRONICS MATERIALS KOREA LTD
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