Dynamic random access memory device with the combined open/folded bit-line pair arrangement
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Regarding the "cell distribution" ratio in this embodiment, it is the same as that in the first embodiment as shown in FIG. 1: the ratio of the number of memory cells versus the total number of word / bit cross-points is 2 / 3, which is greater than "1 / 2" which is to be obtained in the case of the conventional DRAMs of the full-folded bit-line type, while it is obviously less than "1" (to obtained in the case of the prior-art DRAMs of full-open bit-line type).
Regarding the sense-amplifier layout pitch, each sense amplifier circuit is allowed to be mounted in an increased substrate-surface area that corresponds to the width of three adjacent bit lines (BL0-BL2). Such three-to-one sense-amplifier distribution feature can relax the circuit design rule on the chip substrate of limited size.
Accordingly, the embodiment of FIG. 8 can solve the three major problems in the prior art DRAM devices: the "increased cell-size" problem in the conventional folded bit-line system, the "decreased sense-a...
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