Window for gallium nitride light emitting diode

Abstract

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx / Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Description

[0001]The present invention relates to an improved window for a gallium nitride (GaN)-based light-emitting diode (LED).BACKGROUND OF THE INVENTION[0002]A semiconductor light-emitting diode (LED) includes a substrate, a light emitting region, a window structure, and a pair of electrodes for powering the diode. The substrate may be opaque or transparent. Light-emitting diodes which are based on gallium nitride (GaN) compounds generally include a transparent, insulating substrate, i.e., a sapphire substrate. With a transparent substrate, light may be utilized from either the substrate or from the opposite end of the LED which is termed the “window”.[0003]The amount of light generated by an LED is dependent on the distribution of the energizing current across the face of the light emitting region. It is well known in semiconductor technology that the current flowing between the electrodes tends to concentrate in a favored path directly under the electrode. This current flow tends to act...

AI Technical Summary

Benefits of technology

[0005]Advantageously, the thin NiOx / Au layer provides an excellent ohmic connection to both the amorphous current spreading conducting layer and to the magnesium (Mg)-doped GaN window layer. The highly conductive amorphous layer efficiently spreads current flowing between the electrodes across the light-emitting region to improve the efficiency of the device.

[0006]Additionally, the titanium electrode passes through both the amorphous conducting layer and the underlying Ni / Au to: (a) form an ohmic contact with those layers; (b) contact the p-doped top widow layer and form a Schottky diode connection therewith; and (c) provide good adhesion between the titanium (Ti) and the magnesiusm (Mg)-doped window layer. The Schottky diode connection forces current from the electrode into the amorphous conducting layer and eliminates the tendency of the prior art structures to concentrate current in a path directly under the electrode.

Problems solved by technology

Further since such favored paths fall under the opaque electrode, the generated light reaching the electrode is lost.

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