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Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

a technology of electrode film and semiconductor device, which is applied in the direction of semiconductor/solid-state device details, transportation and packaging, vacuum evaporation coating, etc., can solve the problems of electrode film, poor adhesiveness of cu to substrate, and difficult etching of au

Inactive Publication Date: 2013-05-28
KOBELCO RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The Al alloy electrode exhibits resistivity lower than 20 μΩcm and improved thermal stability, making it suitable for large-size and high-resolution displays without generating hillocks, and can be fabricated using a sputtering process with a sputtering target made of the same alloy.

Problems solved by technology

Au is difficult to etch, which property is required to form a specified pattern after deposition of the film, that is, electrode film, and it is expensive.
Cu is poor in its adhesiveness to substrates and in corrosion resistance.
Both metals are not practical.
On the other hand, Al is insufficient in thermal stability, and has a disadvantage in generating fine protrusions called hillocks on the surface of an electrode film during a heating process after deposition of the electrode film which is inevitable for the TFT fabrication process.
However, in this technique, films with different etching properties must be simultaneously etched, so that it becomes difficult to obtain a good interconnection pattern.

Method used

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  • Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices
  • Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices
  • Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0041]A binary Al alloy film with a 300 nm thickness was deposited on a glass substrate with a 0.5 mm thickness, by DC magnetron sputtering, using a composite target in which a specified number of {Fe, Co, Ni, Ru, Rh or Ir (purity: 99.9% for each element)} chips (5 mm×5 mm) were put on a pure Al target (purity: 99.999%), or a vacuum melted Al alloy target containing Fe, etc. in specified amounts. The Al alloy film is used as an interconnection of an electrode for semiconductor devices.

[0042]The composition of the films thus obtained was analyzed by ICP, and the resistivity thereof was measured at room temperature by four-point probe method. The film was then annealed at 400° C. for 1 hr. The resistivity of the film was similarly measured. The results are summarized in the relationship between amount of Fe, etc. (hereinafter, referred to as “content of alloy element”) and resistivity, which are shown in FIG. 1 (before annealing) and FIG. 2 (after annealing). The resistivity is increa...

example 2

[0043]An Al alloy film was formed on a substrate to the same thickness as in Example 1 the same way as in Example 1, using a vacuum melted Al alloy target of Al-10 at %Fe. The film was annealed at a temperature range from 100 to 500° C. for 1 hr. The resistivity of this film was measured the same way as in Example 1. The results are summarized in the relationship between the annealing temperature and the resistivity. As is apparent from this figure, the resistivity is decreased when the annealing temperature is higher than 150° C.

example 3

[0044]An Al alloy film containing one or more alloying elements selected from Fe, Co, Ni, Ru, Rh or Ir was formed the same way as Example 1. The film was annealed at 400° C. for 1 hr, and was observed by optical microscopy. The results are summarized in the relationship between the content of an alloying element and the hillock density, which are shown in FIG. 4. The hillock resistance is significantly improved by the addition of Fe, etc.

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Abstract

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.

Description

[0001]This is a Division, of application Ser. No. 08 / 281,028 filed on Jul. 27, 1994 now U.S. Pat. No. 5,514,909.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to an electrode for semiconductor devices, its fabrication method, and a sputtering target for forming an electrode film for semiconductor devices, and particularly to an electrode for semiconductor devices which is suitable for an electrode (interconnections and electrode itself) of an active matrixed liquid crystal display having a thin film transistor, and its fabrication method.[0004]2. Description of the Related Art[0005]A liquid crystal display (hereinafter, referred to as “LCD”) is excellent in thinning, lightening and power-saving compared with conventional displays using a cathode-ray tube, and further it is capable of obtaining a high resolution image. Furthermore, to improve the image quality, there is proposed an LCD with a thin film transistor (hereinafter, referred t...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): C23C14/34H01L21/285H01L21/3205H01L23/52H01L23/532
CPCH01L21/2855H01L23/53219Y10T428/12736H01L2924/0002H01L2924/00
Inventor YAMAMOTO, SEIGOTAKAGI, KATSUTOSHIIWAMURA, EIJIYOSHIKAWA, KAZUOOONISHI, TAKASHI
Owner KOBELCO RES INST