192results about How to "Short retention time" patented technology

A memory structure, includes (a) active columns of polysilicon formed above a semiconductor substrate, each active column extending vertically from the substrate and including a first heavily doped region, a second heavily doped region, and one or more lightly doped regions each adjacent both the first and second heavily doped region, wherein the active columns are arranged in a two-dimensional array extending in second and third directions parallel to the planar surface of the semiconductor substrate; (b) charge-trapping material provided over one or more surfaces of each active column; and (c) conductors each extending lengthwise along the third direction. The active columns, the charge-trapping material and the conductors together form a plurality of thin film transistors, with each thin film transistor formed by one of the conductors, a portion of the lightly doped region of an active column, the charge-trapping material between the portion of the lightly doped region and the conductor, and the first and second heavily doped regions. The thin film transistors associated with each active column are organized into one or more vertical NOR strings.

NOR memory strings may be used for implementations of logic functions involving many Boolean variables, or to generate analog signals whose magnitudes are each representative of the bit values of many Boolean variables. The advantage of using NOR memory strings in these manners is that the logic function or analog signal generation may be accomplished within one simultaneous read operation on the NOR memory strings.

Multi-gate NOR flash thin-film transistor (TFT) string arrays (“multi-gate NOR string arrays”) are organized as stacks of horizontal active strips running parallel to the surface of a silicon substrate, with the TFTs in each stack being controlled by vertical local word-lines provided along one or both sidewalls of the stack of active strips. Each active strip includes at least a channel layer formed between two shared source or drain layers. Data storage in the TFTs of an active strip is provided by charge-storage elements provided between the active strip and the control gates provided by the adjacent local word-lines. Each active strip may provide TFTs that belong to one or two NOR strings, depending on whether one or both sides of the active strip are used.

In a semiconductor device, an internally-generated power supply voltage VPP is monitored. If the internally-generated power supply voltage VPP is lower than a lower limit voltage, serial refresh is selected as a double refresh operation mode. In the serial refresh, double refresh for a pair address is inserted in a next refresh cycle. By the serial refresh, decrease of the internally-generated power supply voltage VPP is suppressed.

A process and an apparatus for the manufacture of biogas and a solids fraction from an organic waste feedstock is provided. The process involves thermal hydrolysis of the organic waste feedstock at a temperature from about 100 to about 220° C., a pressure from about 5 to about 20 bars, for a period of time from about 15 minutes to 4 hours, to produce a hydrolysate. The hydrolysate undergoes anaerobic digestion at a temperature from about 25 to 60° C., for a period of time from about 1 to 35 days to produce a biogas stream and a digestate. The digestate is separated into a solids fraction and a liquid fraction, and a portion of the solids fraction is recycled for further anaerobic digestion. The biogas stream, characterized as having a methane content from between 55 to 80% by volume, and the solids fraction, are recovered. The apparatus includes a receiving bin for receiving and supplying organic waste feedstock to a thermal hydrolysis reactor. The thermal hydrolysis reactor for processing the organic waste feedstock at a temperature from about 100 to about 220° C., a pressure from about 5 to about 20 bars, for a period of time from about 15 minutes to 4 hours to produce a hydrolysate. An anaerobic digester for processing the hydrolysate at a temperature from about 25 to 60° C., for a period of time from about 1 to 35 days to produce the biogas and a digestate, and a solids thickening tank for separating the digestate into the solid fraction, a liquid fraction and a secondary biogas fraction.

A memory structure, includes active columns of polysilicon formed above a semiconductor substrate, each active column includes one or more vertical NOR strings, with each NOR string having thin-film storage transistors sharing a local source line and a local bit line, the local bit line is connected by one segment of a segmented global bit line to a sense amplifier provided in the semiconductor substrate.

A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the floating gate is reduced. The data stored on the floating gate is dynamically refreshed. The floating gate transistor provides a dense and planar dynamic electrically alterable and programmable read only memory (DEAPROM) cell adapted for uses such as for a dynamic random access memory (DRAM) or a dynamically refreshed flash EEPROM memory. The floating gate transistor provides a high gain memory cell and low voltage operation.

A semiconductor device includes a first circuit that generates a self refresh signal in a predetermined cycle asynchronous with a cycle set externally, a second circuit that generates a refresh address in response to the self refresh signal and updates the refresh address and outputs the refresh address, a third circuit that retains a relief address, a fourth circuit that counts number of generation of the self refresh signal and activates an interrupt signal when a count of the number of generation reaches a predetermined count, a fifth circuit that specifies the refresh address when the interrupt signal is in an inactive state and specifies the relief address when the interrupt signal is in an active state, and a sixth circuit that performs a refresh operation on memory cells specified by the selected refresh address or the relief address. The second circuit temporarily stops updating the refresh address in response to activation of the interrupt signal.

A continuous countercurrent flow process for converting FGD gypsum to ammonium sulfate and calcium carbonate including countercurrent flows with internal recycle of liquids to maximize the purity of reaction products while minimizing reaction times, and further include embodiments of the process that provide a yield of both ammonium sulfate and calcium carbonate to be 97 to 100%, and embodiments that provide for processes having a total time of reaction being 8 to 12 minutes, the invention further including processes for removing contaminants from the FGD gypsum employing an acid rinse process and/or a slurry tank reactor process.

Disclosed herein is a completely synthetic cell-free therapy based on peptide amphiphile nanostructures designed to mimic the activity of vascular endothelial growth factor (VEGF), one of the most potent angiogenic signaling proteins. The VEGF-mimetic filaments disclosed herein were found to induce phosphorylation of VEGF receptors and induce pro-angiogenic behavior in endothelial cells, indicated by an enhancement in proliferation, survival and migration in vitro.

The present invention is directed to providing prasugrel hydrochloride or the like with a reduced content of OXTP. A method for producing prasugrel hydrochloride with a reduced content of OXTP, comprising dissolving free prasugrel containing OXTP in an inert solvent and adding hydrochloric acid optionally dropwise to the solution for reaction is also provided.

A method, apparatus, logic device, and storage system for power-fail protection are disclosed. The method includes: when a system power supply fails, supplying, by a battery, power to a south bridge chip (SBC), a non-volatile flash storage medium, an interface conversion circuit (ICC) between the SBC and the non-volatile flash storage medium and a memory; and transmitting unsaved data in the memory to the corresponding non-volatile flash storage medium via the ICC, by using an unused bus interface of the SBC. The ICC converts a bus interface of the SBC into a corresponding bus interface of the non-volatile flash storage medium. The embodiments of the invention can effectively solve problems of data loss in case of system power failure and short retention time, and realize protection operation in case of system power failure, convenient upgrading memory capacity, and saving system space, without adding cost and total capacity of battery.

The invention relates to a polysaccharide macromolecular paramagnetic metal complex and a synthesis method and an application thereof. Polysaccharide macromolecules are used as carriers, and a ligand compound, the side chains of which contain open-chain or annular polyamino polycarboxylic compounds, acts with paramagnetic metal ions to form the paramagnetic metal complex, wherein the paramagnetic metal ions are positive divalent or trivalent ions of metal elements, the atomic numbers of which are 21-29, 42 and 44 or 57-71. The polysaccharide macromolecular paramagnetic metal complex can be used as a magnetic resonance imaging contrast agent for lymphatic organs, lymphatic vessels, lymphatic systems and cardiovascular systems of people or other mammals.

The invention belongs to the field of electrode material preparation and relates to a lithium-rich manganese-based cathode material precursor, a cathode material and a preparation method thereof. The preparation method comprises the following steps: mixing metal salts (manganese salt, cobalt salt and nickel salt) and a surfactant and water, and dissolving to obtain a metal salt solution; putting a precipitant in water, stirring and dissolving to obtain a precipitant solution; carrying out liquid-liquid coprecipitation reaction on the metal salt solution and the precipitant solution in a hypergravity field reactor, filtering, cleaning, and carrying out vacuum drying so as to obtain a precursor; mixing the precursor and lithium salt and then calcining so as to obtain the lithium-rich manganese-based cathode material. By the coprecipitation method based on the hypergravity technology, the lithium-rich manganese-based cathode material precursor with primary particle being below 100 nm and secondary particle being 1-10 microns is rapidly prepared, and furthermore the prepared cathode material has advantages of uniform component distribution and particle size distribution, small granularity and high activity. Initial irreversible capacity can be reduced, and cycle performance of a lithium ion secondary battery can be enhanced.

The object of the invention is to provide a polymerization processor from a raw material in a molten state, which can synthesize a polymer of high quality. Lactide sent from an apparatus for supplying lactide 1 is heated and molten in an apparatus for melting lactide 2, and a catalyst is added to the lactide in an apparatus for supplying a catalyst 3. The molten lactide is supplied through an apparatus for supplying lactide 4 to a horizontal reaction tank 5, and flows by a head difference with a polymerization reaction proceeding. A discharged reaction solution is supplied to the upper part of a vertical reaction tank 6, and flows through the vertical reaction tank 6 by gravity with the polymerization reaction proceeding. Thereafter, the reaction solution is transported to an apparatus for removing remaining lactide 7, where unreacted lactide is removed, and then the reaction solution is discharged.

The invention relates to compound emulsifiable paste for treating acne and a preparation method thereof, in particular to a medicament for treating acne and a preparation method thereof. The compound emulsifiable paste solves the problems of long treatment course and skin oxidation, dim skin and formation of color spots in the healing process in the conventional medicament for treating the acne. The compound emulsifiable paste is prepared from clindamycin hydrochloride, metronidazole, vitamin A, vitamin C, an emulsifying agent, stearic acid, albolene, glycerol monostearate, lanolinum, glycerol and purifying water. The preparation method comprises the following steps of: adding the vitamin A into uniform solution prepared from the stearic acid, the albolene, the glycerol monostearate and the lanolinum to obtain an oil phase; dissolving the glycerol and the emulsifying agent into the purifying water, adding the clindamycin hydrochloride, the metronidazole and the vitamin C, and stirring uniformly to obtain a aqueous phase; and adding the oil phase into the aqueous phase, stirring, homogenizing and standing the mixture to obtain the compound emulsifiable paste for treating the acne. The treatment period of the compound emulsifiable paste is between 14 and 24 days, skin is bright and clean after healing, and the compound emulsifiable paste can treat the acne, seborrheic dermatitis, acne rosacea and folliculitis.

The invention provides a method for separating and purifying fidaxomicin. The method comprises the following steps: taking the C8 reverse phase silica gel as the filling material, carrying out column chromatography, dissolving fidaxomicin by acetic acid, loading the solution into the column, eluting the solution by a mobile phase, and collecting the sample; after the separation and purification, the HPLC purity of fidaxomicin is not less than 99.5%, and the content of a single impurity is not larger than 0.10%. The provided purification method of fidaxomicin adopts a novel medium having high selectivity and high capacity, thus the column has a high efficiency, the resolution is high, the separation and purification effect is better, the retention time is shorter, the elution agent using amount is less, and moreover the shortages that the fidaxomicin purity is low and the fidaxomicin quality is bad due to the low column efficiency and bad separation degree are overcome.