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Method for improving tin sulfide semiconductor film conductivity

A high-conductivity, semiconductor technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as no practical application, and achieve the effect of easy operation and simple process

Inactive Publication Date: 2007-12-26
SOLAR ENERTECH SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the conductivity of tin sulfide semiconductor thin films, some scholars have done some research on tin sulfide doping, but no practical application has been seen yet.

Method used

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  • Method for improving tin sulfide semiconductor film conductivity

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The process and steps in the embodiment of the present invention are as follows:

[0014] (1) According to the required conductivity and the curve shown in Fig. 1, in the high-purity 99.999% tin sulfide powder, add 1.1wt% metal antimony powder, and fully grind and mix;

[0015] (2) Put the above-mentioned mixture in a molybdenum boat, then put it into a conventional vacuum coating machine, place the glass substrate to be plated in the coating machine, and the vacuum degree in the vacuum coating machine is 1.5~2.0×10 -4 Pa, the distance between the glass substrate and the evaporation source (ie molybdenum boat) is 10cm, and the temperature of the evaporation source is 1100°C. Under these conditions, vacuum evaporation coating is carried out, and finally a tin sulfide semiconductor film with high conductivity can be obtained on the substrate.

[0016] It can be seen from the figure that in the method of the present invention, the weight percentage of antimony doped is in ...

Embodiment 2

[0017] Embodiment 2: This embodiment is basically the same as the above embodiment, except that the amount of antimony added is 0.2wt%. The substrate used is a silicon wafer.

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Abstract

The invention relates to a method for improving conductivity of stannum sulphide semiconductor film, comprising the following steps of: (1) doping stibium powder in 0.2-1.2wt% into high-purity stannum sulphide powder and fully grinding and mixing them; (2) placing the mixture in a Mo boat and evaporative making high-conductivity stannum sulphide semiconductor film in a vacuum coater, where process parameters of vacuum evaporation: vacuum 1.5-2.0*10-4pa, space between substrate and evaporating source 10 cm, and temperature of evaporating source 1100 deg.C.

Description

technical field [0001] The invention relates to a method for improving the conductivity of a tin sulfide semiconductor thin film, which belongs to the technical field of semiconductor thin film preparation and modification treatment. Background technique [0002] Tin sulfide semiconductor has a high light absorption coefficient and a suitable band gap (about 1.45eV), and according to the Sn / S atomic ratio in it, the band gap is adjustable, and can be made to have different wavelengths Gradient materials with good light absorption are used in solar cells. When tin sulfide is used in the manufacture of solar cells, due to the high resistivity of the tin sulfide film, it affects its application in the manufacture of solar cells and other optoelectronic devices. In order to improve the conductivity of tin sulfide semiconductor thin films, some scholars have done some research on tin sulfide doping, but there is no practical application. Contents of the invention [0003] The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203H01L31/18C23C14/24
CPCY02P70/50
Inventor 魏光普史伟民邱永华葛艳辉
Owner SOLAR ENERTECH SHANGHAI
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