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Method for forming quantum point

A technology of quantum dots and atomic force microscopy, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor controllability of quantum dot size, achieve good size controllability, and avoid the effect of surface energy state

Inactive Publication Date: 2008-02-20
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Claims
  • Application Information

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Problems solved by technology

[0009] In order to solve the disadvantages of poor controllability of quantum dot size and generation of a large number of surface energy states in the quantum dot manufacturing process in the prior art; the present invention provides a method for forming quantum dots. Avoid the creation of a large number of surface energy states

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  • Method for forming quantum point

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Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with accompanying drawing.

[0022] Referring to Figures 1 to 4, the method for forming quantum dots provided by the present invention includes the following steps:

[0023] First, a semiconductor material substrate 1 (such as silicon, germanium, gallium arsenide, indium gallium nitride, gallium nitride, indium nitride, silicon is used in this embodiment) is provided, and a metal film 2 is sputtered on the substrate 1, and the metal The thin film 2 has a limited coefficient of thermal expansion and high temperature resistance. In this embodiment, a gold (Au) thin film is used; the thickness of the metal thin film 2 is not greater than the length of the atomic force microscopic probe 4 . The metal thin film 2 can be formed by filling the high vacuum chamber with argon gas. Under the action of a high electric field, the gas forms a high-energy ion flow, bombards the gold target, and sputters go...

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Abstract

The method includes following steps: first, forming a metal thin film on a substrate; forming a Nano structure of hole on the said metal thin film by using microprobe in atomic force; then, depositing a second film layer on the metal layer with the Nano structure of hole; finally, removing the metal thin film, and the second film layer on the metal layer so as to obtain a quantum point on the substrate. The method forms Nano structure of hole in prearranged size. Since metal possesses limited thermal expansion ratio, the method can control size of the designed quantum point effectively. The method prevents generation of a great number of surface energy states.

Description

【Technical field】 [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for forming quantum dots. 【Background technique】 [0002] Quantum Dot (Quantum Dot, referred to as QD) is a zero-dimensional free quantum structure (ZeroDimensional Quantum Structures), and its size in each direction is about 10nm. When the particle size reaches the nanometer level, size confinement will cause size effect, quantum confinement, macroscopic quantum tunneling effect and surface effect. Therefore, quantum dots exhibit many physical and chemical properties different from macroscopic materials. [0003] In recent years, semiconductor quantum dots have developed many applications, such as high-performance single-electron devices, biomedical devices, sensing and detection devices, optical devices, etc., which have caused extensive discussion and research. [0004] At present, quantum well (Quantum Well) structures are mostly used to furthe...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 林孟东
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD