Method for preparing high quality GaInAlN material on silicon substrate

Abstract

This invention discloses a preparation method for high quality material of indium gallium aluminum nitrogen on silicon substrate. For the method, first, forming a titan transition layer on silicon substrate surface, then forming indium gallium aluminum nitrogen stack with at least one low-temperature buffer layer of aluminum nitride that grows directly on titan transition layer. This invention can prevent the harm to metal back of silicon nitride and gallium metal and grow material of high quality.

Description

technical field [0001] The invention relates to semiconductor materials, in particular to a method for preparing high-quality InGaAlN material on a silicon substrate. Background technique: [0002] InGaAlN (In x Ga y Al 1+x-y N, 0<=x<=1, 0<=y<=1) is a preferred material system for preparing short-wavelength light-emitting devices. In recent years, many novel light-emitting devices have been manufactured with InGaAlN materials, such as blue, green, and white light-emitting diodes, purple semiconductor lasers, and so on. At the same time, InGaAlN material is also a good material for preparing many high-performance electronic devices. In the prior art, methods for preparing InGaAlN materials on sapphire substrates and silicon carbide substrates have been relatively mature. According to these disclosed technologies, high-quality InGaAlN materials can already be prepared. However, silicon carbide substrates are very expensive, and the growth of InGaAlN materials...

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Problems solved by technology

However, due to the low melting point of aluminum (660°C) and the high growth temperature of InGaAlN materials (>1000°C), this aluminum transition layer is unstable during the growth of InGaAlN materials, so it will not Conducive to obtaining high-quality InGaAlN materials

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