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Metal fuse structure of semiconductor assembly part and its manufacturing method

A technology for metal fuses and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increased energy costs, easily damaged fuses, and unconformity with economic benefits, and achieves The effect of increasing fusing yield and reducing process cost

Inactive Publication Date: 2008-05-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the fusing time is not enough, the insufficient energy absorbed by the fuse will easily lead to an unsatisfactory fusing yield. If the fusing time is prolonged, the process efficiency will be reduced, energy costs will be increased, and other components around the fuse will be easily damaged. economic benefits

Method used

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  • Metal fuse structure of semiconductor assembly part and its manufacturing method
  • Metal fuse structure of semiconductor assembly part and its manufacturing method
  • Metal fuse structure of semiconductor assembly part and its manufacturing method

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Embodiment Construction

[0037] In view of the problems encountered by the above-mentioned conventional fuse structure when it is blown by laser, the present invention provides a metal fuse structure for semiconductor components, which can be easily and easily repaired or redundant when using laser to repair semiconductor components. Efficient blowing of fuses wherein the metal fuse structure of the present invention is characterized by weak link portions with low step coverage.

[0038] figure 1 It is a schematic cross-sectional view of a conventional metal fuse structure. Such as figure 1 As shown, the first dielectric layer 20 is formed on the semiconductor substrate 10, wherein the first dielectric layer 20 is embedded with a multiple wiring layer 22, for example, it may include multiple layers of inter-metal dielectric layers (Inter-Metal Dielectric), Metal interconnects formed on each IMD layer, and metal plugs formed in the IMD layer are used to couple the metal interconnects above and below ...

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Abstract

A metallic fuse structure of semiconductor package features that it has an easily fused part without additional exposure, etch and deposition. Its preparing process features that in the procedure of etching fuse, at least one channel is etched in dielectric layer and a metallic layer is then sputtered to form a metallic fuse with a weak connection part on the side wall of said channel, or in the layout of IC a fuse is designed to have a narrow neck to form a weak connection part. Its advantage is high rate of excellent fusing-off.

Description

technical field [0001] The present invention relates to a metal fuse structure of a semiconductor component, in particular to a method for manufacturing a metal fuse structure with a Weak Link. Background technique [0002] IC packages often include fusible wires or fuses for rewiring memory or logic circuits. For example, in erasable programmable read-only memory (Electrically Erasable and Programmable Read Only Memories, EEPROM), dynamic random access memory (Dynamic Random Access Memories, DRAM) and static random access memory (Static Random Access Memories, SRAM) and the like In the semiconductor memory, once a defective memory cell is found, repair or redundancy technology (RedundancyTechnology) can be used to blow the fuse connected to the defective memory cell by laser, and then selectively replace it with a spare memory cell. Increase the yield rate of semiconductor memory cells and reduce production costs. Similarly, the logic circuit can also be repaired or rewir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/3205H01L23/58H01L23/62
Inventor 郑心圃吴集锡侯上勇
Owner TAIWAN SEMICON MFG CO LTD