Silicon chip unloading process
A silicon wafer and process technology, applied in the field of polymer silicon wafer unloading process, can solve the problems of inability to improve the polymer and the reduction of the etching process yield, and achieve the effects of avoiding variables, simple and easy methods, and ensuring stability.
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Embodiment 1
[0020] In the process of gate etching, the equipment used is PM2 of the Equipment Technology Research Center of the North Microelectronics Base. The gate structure of the patterned silicon wafer used for etching is: from top to bottom, photoresist, silicon oxynitride, Polysilicon, silicon dioxide, silicon wafer (substrate, substrate) (see figure 1 ).
[0021] The etching process is mainly divided into the following steps:
[0022] 1. The silicon wafer is sent to the surface of the electrostatic chuck in the chamber;
[0023] 2. Apply the voltage of the electrostatic chuck, and fix the silicon wafer on the surface of the electrostatic chuck through electrostatic attraction;
[0024] 3. Through the process gas;
[0025] 4. The pendulum valve adjusts the pressure to the set value;
[0026] 5. Add the lower electrode to start the glow;
[0027] 6. The etching process starts. The etching process mainly includes the following steps:
[0028] (1) BT (Break through), that is, th...
Embodiment 2
[0034] According to the method described in Example 1, the difference is that in the silicon wafer unloading process after the etching process, the process conditions of step (1) that is the preliminary silicon wafer unloading are: the carrier gas is He, the flow rate is 300 sccm, and the chamber pressure 80mT, the power of the upper electrode is 200W, the power of the lower electrode is 0w, and the action time of this step is 3s; the process condition of step (2) is to eliminate the residual charge on the surface of the electrostatic chuck and remove the polymer on the surface of the pattern silicon wafer: the carrier gas is 250sccmHe and 30sccmO 2 mixed gas, the chamber pressure is 80mT, the power of the upper electrode is 100W, the power of the lower electrode is 0W, and the time is 1s.
[0035] Observation by Hitachi S-8820 CD-SEM under the condition of discharge multiple of 120,000, it can be clearly seen that there is no polymer attachment on the surface of the silicon w...
Embodiment 3
[0037] According to the method described in Example 2, the difference is that in the silicon wafer unloading process, the process conditions of step (1) are: the flow rate of He is 250sccm, the chamber pressure is 60mT, the power of the upper electrode is 300W, and the power of the lower electrode is 0w , this step action time is 3s; The technological condition of step (2) is: carrier gas is 450sccmHe and 20sccm O 2 mixed gas, the chamber pressure is 60mT, the power of the upper electrode is 300W, the power of the lower electrode is 0W, and the time is 2s.
[0038] Observation by Hitachi S-8820 CD-SEM under the condition of discharge multiple of 120,000, it can be clearly seen that there is no polymer attachment on the surface of the silicon wafer (see Figure 4 ).
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