Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transistor structure and control unit having same

A technology for control units and transistors, applied in electrical components, electrical solid-state devices, semiconductor devices, etc., can solve the problems of occupying a considerable circuit area, unfavorable product design and circuit miniaturization.

Active Publication Date: 2008-10-15
AU OPTRONICS CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be clearly seen from FIG. 1 that the storage capacitor 12 does have a structure that occupies a considerable lateral portion on the substrate 100. If it is converted to a planar view, it is conceivable that it will inevitably occupy a relatively large circuit area, resulting in restrictions on circuit configuration. , is not conducive to product design and circuit miniaturization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transistor structure and control unit having same
  • Transistor structure and control unit having same
  • Transistor structure and control unit having same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] First please refer to FIG. 2A , which is a schematic cross-sectional view of a control unit 2 according to a preferred embodiment of the present invention; the control unit 2 includes a transistor structure 3 and a first capacitor structure 5 disposed on a substrate 20 . For convenience of description, a control region 201 and a capacitor region 202 can be defined on the substrate 20 , the transistor structure 3 is located on the control region 201 , and the first capacitor structure 5 is located on the capacitor region 202 .

[0043] In detail, the transistor structure 3 sequentially includes a first conductive layer 31 , a dielectric layer 21 , an amorphous silicon layer 33 , an electrode layer 35 , a second conductive layer 37 , a flat dielectric layer 23 and an upper gate 39 . Wherein, the dielectric layer 21 covers the first conductive layer 31, the amorphous silicon layer 33 partially covers the dielectric layer 21, and the electrode layer 35 is arranged on the amo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The structure of the transistor includes first conductive layer, second conductive layer and upper grid. The structure of the transistor forms fortified capacitance among first conductive layer, second conductive layer and upper grid so as to reduce circuit area possessed by setting up additional capacitance greatly. Or, the invention raises capacity of capacitance without need of setting up additional capacitance.

Description

technical field [0001] The invention relates to a transistor structure and a control unit with the transistor structure; in particular, a transistor structure and a control unit for a liquid crystal display driving circuit. Background technique [0002] Due to the advantages of power saving, light weight, low radiation and easy portability, liquid crystal displays have become mainstream products on the market. For a Thin Film Transistor Liquid Crystal Display (TFT-LCD), it is mainly composed of a display panel and a backlight assembly, wherein the display panel includes a transistor array, a color filter substrate and liquid crystals poured therein. Through the operation of the above components, the function of image display is provided. [0003] Generally speaking, on the external drive circuit of the LCD screen, in addition to transistors, additional large capacitors must be provided to provide a voltage stabilizing effect. However, the large capacitors usually occupy a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/41H01L29/78H01L27/12
Inventor 梁中瑜魏俊卿
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com