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Method for producing active layer film using precursor solution of metal-sulfur series compound

A technology of precursors and compounds, which is applied in the field of making active layer thin films using precursor solutions, can solve the problems of less application, difficulty in hydrazine, explosion hazard, etc.

Inactive Publication Date: 2009-02-04
台湾薄膜电晶体液晶显示器产业协会 +7
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  • Abstract
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  • Application Information

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Problems solved by technology

[0007] Although the above-mentioned prior art has adopted the precursor solution coating method to make the active layer film on the transistor, the hydrazine used therein is poisonous and has the risk of explosion, and anhydrous Hydrazine, and hydrazine is quite difficult to achieve complete water removal and is rarely used in industrial production

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  • Method for producing active layer film using precursor solution of metal-sulfur series compound
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  • Method for producing active layer film using precursor solution of metal-sulfur series compound

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Embodiment Construction

[0022] Please refer to figure 1 As shown, it is a schematic diagram of the production process of a preferred embodiment proposed by the present invention. First, a precursor containing benzyl or its derivatives and metal-chalcogenides is synthesized (step S101), wherein the benzyl or its derivatives The molecular formula of derivatives and metal-chalcogenide precursors is as follows: (R 1 , R 2 , R 3 , R 4 , R 5 -C 6 h 3 -CH 2 -) nh-2i m h x i , while R 1 , R 2 , R 3 , R 4 and R 5 are independent functional groups; M represents a positively charged metal ion with n valence, and the valence is an integer of 1 to 6; X represents a chalcogenide element; h is an integer of 1 to 10; and i is an integer of 0 to 30, wherein R 1-5 The functional group is selected from hydrogen atom, aromatic group, ester group, ether group, carboxylic acid group, sulfonic acid group, aldehyde group, hydroxyl group, ketone group, imine group, amido group, methyl or ethyl group and 3 to ...

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Abstract

A method of producing initiative layer film with the precursor solution of metal- chalcogenide, the steps includes: synthesizing benzyl or ramification and metal-chalcogenide Precursor, and the precursor is dissolved in a solvent to produce the precursor solution, thereinto, chalcogen or compound can be added into the precursor solution to adjust the mol ratio of metal ion and chalcogenide. Then the precursor solution is smeared to the base board in definite mode, it is solidified to form the metal- chalcogenide compound film, so, it can replace the current method that producing amorphous Si initiative layer film with PECVD.

Description

technical field [0001] The invention relates to a method for making an active layer thin film, in particular to a method for making an active layer thin film by using a precursor solution. Background technique [0002] At present, in the process of liquid crystal display (LCD) production, the thin film transistor array (TFT Array) process still uses technology similar to the traditional semiconductor industry to process the glass substrate through vacuum coating, exposure, yellow light development and etching to form on the substrate. A large number of transistors. However, as the size of the panel gradually expands, the use of the vacuum coating process will cause the problems of high cost of process equipment and a decrease in process yield. In the commonly used bottom gate (Bottom Gate) thin film transistor component structure, the active layer film is deposited by plasma-assisted chemical vapor deposition (PlasmaEnhanced Chemical Vapor Deposition, PECVD) on amorphous si...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/208H01L21/336
Inventor 欧俊尧郑华琦萧名男庄博全王朝仁
Owner 台湾薄膜电晶体液晶显示器产业协会