Organic electroluminescent white light device
An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve problems such as cost reduction, luminous color coordinate shift, and luminescent spectrum instability, so as to reduce production costs and simplify Good preparation technology and controllability
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Embodiment 1
[0055] The schematic diagram of the structure of the organic electroluminescent device proposed in this embodiment is shown in the attached image 3 , the detailed steps of preparation are as follows:
[0056] 1) Use boiling detergent ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate ITO glass, and place it under an infrared lamp to dry, wherein the ITO on the conductive substrate is used as the anode layer of the device, and the ITO film Sheet resistance is 5Ω, film thickness is 100.0nm;
[0057] 2) Put the above-mentioned cleaned and dried ITO glass under a pressure of 1×10 -5 In the vacuum chamber of Pa, vapor-deposit 5,6,11,12-tetraphenyltetracene (abbreviated as rubrene) on the above-mentioned ITO film, with a thickness of 100nm, as the color conversion hole transport layer of the device;
[0058] 3) Keeping the above vacuum pressure constant, continue to vapor-deposit NPB on the above hole transport layer, with a thickness ...
Embodiment 2
[0064] The detailed implementation of the preparation steps of the organic electroluminescent device proposed in this embodiment is as follows:
[0065] 1) Use boiling detergent ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate ITO glass, and place it under an infrared lamp to dry, wherein the ITO on the conductive substrate is used as the anode layer of the device, and the ITO film The sheet resistance is 5ΩΩ, and the film thickness is 100.0nm;
[0066] 2) Put the above-mentioned cleaned and dried ITO glass under a pressure of 1×10 -5 In the vacuum chamber of Pa, the color conversion hole transport layer is prepared by evaporation on the above ITO film, and the color conversion material Rubrene is doped with the luminescent dye 4-4-dicyanomethylene-2-tert-butyl-6- (1,1,7,7-tetramethyl-julonidine-9-vinyl)-4H-pyran (abbreviated as DCJTB), was doped by dual-source evaporation method, DCJTB, Rubrene Placed in different evaporation s...
Embodiment 3
[0073] The schematic diagram of the device structure of this embodiment is as follows Figure 4 As shown, the detailed implementation of the preparation steps of the device is as follows:
[0074] 1) Use boiling detergent ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate ITO glass, and place it under an infrared lamp to dry, wherein the ITO on the conductive substrate is used as the anode layer of the device, and the ITO film Sheet resistance is 12Ω, film thickness is 100.0nm;
[0075] 2) Put the above-mentioned cleaned and dried ITO glass under a pressure of 1×10 -5 In a vacuum chamber, 40nm NPB was evaporated on the above ITO film as the hole transport layer of the device;
[0076] 3) Keep the above vacuum pressure constant, continue to vapor-deposit the blue light-emitting layer doped with Firpic on the above-mentioned hole transport layer, and use the double-source evaporation method for doping, and place the host material CP...
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