Electronic component and electronic apparatus using this electronic component
A technology of electronic components and convex parts, applied in the direction of electrical components, impedance networks, etc., can solve the problem that the attenuation of the receiver cannot be sufficiently obtained
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Embodiment approach 1
[0097] Figure 1A It is a top view of a SAW device as an electronic component according to Embodiment 1 of the present invention, Figure 1B is its cross-sectional view.
[0098] As shown in the figure, the SAW device of Embodiment 1 includes comb electrodes 2 on the substrate 1, reflectors 3 on both sides of the comb electrodes 2, and at least the comb electrodes 2 and the reflectors 3. The protective film4. Furthermore, a pad 5 for taking out an electric signal electrically connected to the comb-shaped electrode 2 is provided on the comb-shaped electrode 2, thereby constituting a SAW device.
[0099] The substrate 1 is composed of a lithium-tantalate substrate (hereinafter referred to as "LT") cut out from a Y plate and rotated around the X axis at an angle of several degrees to the Z axis direction. The rotation angle is 36° of 36°. °YLT substrate.
[0100] The comb electrodes 2 are made of aluminum (hereinafter referred to as "Al") or an Al alloy.
[0101] The protecti...
Embodiment approach 1
[0118] Embodiment 1 of the present invention satisfies
[0119] t2≤h
[0120] (At this point, satisfy p1+p2=p, L1+L2=L, L1≤p1, L2≥p2).
[0121] As a method of obtaining a shape satisfying this relationship, a so-called Bias sputtering method is used. This method is schematically fabricated in the form of Figure 2E In the case of a SiO2 film, the film is formed by sputtering while applying a bias voltage (bias) on the substrate side. At this time, the shape of the SiO2 film can be controlled by changing the ratio of the bias voltage applied to the substrate and the sputtering power.
[0122] In the first embodiment, in order to show how to set the relationship between the height t2 from the top of the convex part of the protective film to the bottom of the concave part of the protective film and the film thickness h of the electrode so that excellent characteristics can be obtained even when the protective film is formed, a t2≤h as embodiment 1 and comparative example 2 ...
Embodiment approach 2
[0134] A SAW device in Embodiment 2 of the present invention will be described below with reference to the drawings.
[0135] The SAW device in the second embodiment employs the same SAW device as that in the first embodiment. Figure 9 It is a cross-sectional view of a SAW device according to Embodiment 2 of the present invention. In this figure, the same as that used in Embodiment 1 Figure 1B The same structure is marked with the same symbol, and its description is omitted.
[0136] Protective film 4 should be made of SiO2, as Figure 9 As shown, it has a concave-convex shape on its top surface. The convex portion 94a of the protective film 4 is located above the portion of the upper surface of the substrate 1 where the comb electrodes 2 are provided. On the other hand, the portion of the upper surface of the substrate 1 where the concave portion 94b of the protective film 4 is located between the convex portions 94a where the comb-shaped electrode 2 does not exist and ...
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