Semiconductor heat-dissipating substrate, and manufacturing method and assembly therefor
A semiconductor and substrate technology, applied in the field of semiconductor heat dissipation substrates, can solve the problems of not being able to be used as a semiconductor heat dissipation substrate and having a large thermal expansion coefficient, etc.
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Embodiment 1
[0096] Eight kinds of tungsten powders having the particle size distribution and iron group impurities shown in Table 1 were prepared. In the present invention, the particle size distribution in the powder is measured with a laser interferometer system for measuring particle size distribution. The tungsten powder was added to the stirring mixer, and the acrylic organic binder was added. The amount of the acrylic organic binder was 0.1 wt% relative to the tungsten powder, and then mixed with alcohol as a mixing medium for 1 hour to form a particle size of about 85μm secondary particles. The content of iron group metals in impurities contained in each of the obtained granular powders was determined; no admixture occurred during the mixing process, but the composition did not change from the first mixing.
[0097] Table I
[0098]
[0099] (Note: 5%, 50% and 95% in the column "Particle Size Distribution" in the table represent cumulative wt%)
[0100] The granulated powders...
Embodiment 2
[0108] To the tungsten powder with the serial number of 2-7 shown in the previous table 1, add iron powder and nickel powder with an average particle size of 1 μm as the iron group metal, and also add copper powder with an average particle size of 5 μm if necessary. The ratios are shown in Table III below. As in Example 1, these powders and the acrylic organic binder were added to a stirring mixer, and then mixed with alcohol as a mixing medium for 1 hour, thereby forming secondary particles having a particle diameter of about 85 μm. The content of iron group metals in impurities contained in each of the obtained granular powders was determined; no admixture occurred during the mixing process, but the composition did not change from the first mixing.
[0109] These granulated powders were then formed into flat sheets of 30 x 15 x 2 mm by press forming them in a powder forming press. The organic binders in these moldings were removed by heating at 400°C for 1 hour and then at ...
Embodiment 3
[0120] A semiconductor heat-dissipating substrate is fabricated that includes a central portion that carries the semiconductor element and an outer edge portion that is different in material therefrom. In this case, a molded article is produced by the following methods (1) to (6) in the press molding process.
[0121] (1) As shown in FIG. 1, an NC multi-axis press was used, in which the lower punches 2a and 2b were operated against the upper punch 1 at the center portion and the outer edge portion, respectively; as shown in (a), the The lower punch 2a is pushed up to a certain extent, and the W powder 3 shown as No. 5 in Table 1 above is loaded in the press; then, as shown in (b), the W powder 3 is extruded in the press, changing the The pressure of the central portion and the peripheral portion, thereby obtaining a molded product A as shown in (c), in which the density of the central portion and the peripheral portion are different, that is, the amount of voids is different. ...
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Abstract
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