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Method for cleaning plasma processing device

A plasma, to-be-cleaned technology, used in cleaning methods and utensils, chemical instruments and methods, metal material coating processes, etc., can solve problems such as inability to completely remove deposits

Inactive Publication Date: 2009-08-26
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the above-mentioned conventional methods of cleaning, the pure chemical cleaning step cannot completely remove the deposits formed on the minute parts of the element to be cleaned, such as its edge parts

Method used

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  • Method for cleaning plasma processing device
  • Method for cleaning plasma processing device
  • Method for cleaning plasma processing device

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Experimental program
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Embodiment Construction

[0025] specific implementation plan

[0026] Referring to the accompanying drawings, embodiments of the present invention will be explained below:

[0027] figure 2 is a schematic structural view of the etching device, wherein 1 indicates an aluminum cylindrical vacuum chamber, and its inside is airtight, which is a plasma etching chamber.

[0028] The vacuum chamber 1 has a trapezoidal cylindrical shape, has an upper portion 1a with a smaller diameter, and a lower portion 1b with a larger diameter, and is electrically grounded. Further, here, a support table (receiver) 2 for supporting a semiconductor wafer W as a substrate to be processed is provided inside the vacuum chamber 1, with its surface to be processed positioned upward and almost horizontally.

[0029] The support table 2 is made of, for example, aluminum, and is supported by a support base 4 via an insulating plate 3 such as a ceramic plate. Further, here a focus ring 5 made of conductive or insulating materia...

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PUM

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Abstract

There is provided a method of cleaning completely a deposit on the surface of the member to be cleaned, of a plasma processing apparatus without any damage of the coating which has been formed anodized coating or sprayed coating on the surface of the member to cleaned. The method of cleaning comprises a chemical cleaning step of dipping in an organic solvent (e.g. acetone) (a); and then a step blowing pressurized air so as to remove the deposit which has been peeled from a buffer plate (14) treated chemically (b); and then, of removing physically the deposit remained at the edges of the buffer plate (14) by blasting by using a CO2 blast apparatus (105), and f steps of dipping the buffer plate (14) in pure water (104), and imparting supersonic vibration to remove the deposit remaining on a buffer plate (14).

Description

technical field [0001] The present invention relates to a method of cleaning deposits formed during, for example, plasma etching of a silicon oxide coating by using CF series gases, and a plasma processing device cleaned by this method. Background technique [0002] In the manufacture of microstructures of semiconductor devices, plasma processing devices have been frequently employed for etching desired locations of semiconductor devices. [0003] In such an etching apparatus, deposits formed during an etching process in which a silicon oxide coating is etched by using an etching gas containing fluorine gas such as a CF series compound are frequently formed and accumulated in an etching chamber. Therefore, cleaning of such etching device deposits must be performed periodically. [0004] Prior art etching devices for cleaning have used chemical cleaning with a cleaning liquid such as an organic solvent, or selectively physical cleaning such as water jets, air jets, and the l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302C23C16/44B08B7/04B24C1/00H01L21/3065
CPCB24C1/003B08B7/04Y10S134/902
Inventor 高濑均长山将之三桥康至中山博之
Owner TOKYO ELECTRON LTD
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