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Device for reclaiming ammonium chloride and titanium tetrachloride complex compound

A technology of titanium tetrachloride and recovery device, applied in the direction of titanium halide, ammonium halide, etc., can solve the problems of reducing equipment utilization efficiency and increasing the workload of equipment cleaning and maintenance engineers, so as to improve equipment utilization rate, extend length and shorten process effect of time

Inactive Publication Date: 2009-09-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the utilization efficiency of equipment is reduced, and the workload of equipment cleaning and maintenance engineers is increased

Method used

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  • Device for reclaiming ammonium chloride and titanium tetrachloride complex compound
  • Device for reclaiming ammonium chloride and titanium tetrachloride complex compound
  • Device for reclaiming ammonium chloride and titanium tetrachloride complex compound

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Embodiment 1

[0035] This embodiment has described in detail by ammonium chloride and titanium tetrachloride complex recovery device of the present invention with reference to accompanying drawing.

[0036] According to ammonium chloride and titanium tetrachloride complex recovering device of the present invention, comprise: drum-shaped shell, two kinds of different structures are used to reclaim the multi-sheet recovery piece of ammonium chloride and titanium tetrachloride complex powder A and recovery piece B, and cooling water pipe. There is almost no interval between the inner wall of the barrel-shaped shell and the edge of the recovery sheet for collecting ammonium chloride and titanium tetrachloride complex powder, and multiple recovery sheets A and B with two different structures are arranged alternately at specified intervals , the cooling water pipe is welded together with multiple recovery pieces A and B with two different structures.

[0037] Such as Figure 4 The overall struc...

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Abstract

Ammonium chloride and titanium tetrachloride complex compound recovery device, which comprises a drum-shaped casing, a plurality of ammonium chloride and titanium tetrachloride complex compound powder recovery pieces A and B with different structures, and a cold trap of a water cooling tube. Nearly no spacing is existed between the inner wall of the drum-shaped casing and the edge of the powder-collecting recovery pieces; the water cooling tube is welded with the ammonium chloride powder recovery pieces which are the hole-less circular recovery pieces A with a smaller diameter, while the other type of recovery pieces are the circular recovery pieces B which are larger in diameter and provided with a circular hole in the center; the hole-less circular recovery pieces A with a smaller diameter are on the top, while the circular recovery pieces B which are larger in diameter and provided with a circular hole in the center are on the bottom. The two types of recovery pieces alternately and coaxially arranged to form a curved airflow channel, with larger spacing on the top and smaller spacing on the bottom.

Description

technical field [0001] The present invention generally relates to by-product (or waste) recycling device produced in the semiconductor device manufacturing process, in particular to ammonium chloride and titanium tetrachloride complex (NH 4 Cl and TiCl 4· wxya 3 ) recovery device. Background technique [0002] In the manufacturing process of semiconductor devices, it is often necessary to deposit titanium nitride (TiN) film as an isolation layer. The formation method of titanium nitride (TiN) film is to use chemical vapor deposition (CVD), and the reaction gas in the CVD processing chamber is NH 3 and TiCl 4 , the chemical reaction formula is; [0003] 8NH 3 +6TiCl 4 →6TiN+24HCl+N 2 [0004] The reaction heater temperature range is 650°C-700°C, and the preferred reaction temperature in the CVD chamber is 680°C. The vacuum in the reaction chamber is 10 Torr (Torr), and NH is added into the CVD processing chamber 3 and TiCl 4 Gas, in the temperature range of 650°C-7...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01C1/16C01G23/02
Inventor 王秀鹏
Owner SEMICON MFG INT (SHANGHAI) CORP