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Substrate support having temperature control surface

A substrate, valve control technology, applied in coating, gaseous chemical plating, discharge tube, etc., can solve the problems of size reduction, difficulty and so on

Active Publication Date: 2009-12-02
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this goal is becoming increasingly difficult as the size of semiconductor wafers increases and the size of the features formed on the wafer decreases

Method used

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  • Substrate support having temperature control surface
  • Substrate support having temperature control surface
  • Substrate support having temperature control surface

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Embodiment Construction

[0017] In order to enhance the uniformity of plasma processing of substrates in a plasma processing apparatus, it is desirable to be able to control the temperature distribution at the exposed surface of the substrate where material is deposited and / or etched. During a plasma etch process, changes in substrate temperature and / or chemical reaction rates at exposed surfaces of the substrate can lead to undesired changes in substrate etch rate as well as etch selectivity and anisotropy. In material deposition processes such as CVD processes, the temperature of the substrate during deposition can significantly affect the deposition rate and the composition and properties of the material deposited on the substrate.

[0018] Backside air cooling systems have been used in substrate holders to provide heat transfer between the substrate holder and the substrate supported on the substrate holder. However, it has been determined that the heat transfer effect of a heat transfer gas such ...

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Abstract

A substrate support having a temperature-controlled substrate support surface includes a liquid supply system having at least one liquid source and a plurality of liquid flow channels. The liquid supply system may include valves that control the distribution of liquid to each of the flow channels. The liquid supply system may also include a controller to control its operation. Liquid can be dispensed through the flow channel in a variety of ways. The substrate support may also include a heat transfer gas supply system that supplies a heat transfer gas between the surface of the substrate support and the substrate supported on the surface of the substrate support.

Description

technical field [0001] The present invention relates to plasma processing apparatus, and more particularly to a temperature-controlled substrate support. Background technique [0002] Processes that plasma processing apparatus can be used for include plasma etching, physical vapor deposition, chemical vapor deposition (CVD), ion implantation, and resist removal of semiconductor, dielectric, and metallic materials. Such substrates include, for example, semiconductor wafers and flat panel displays. Substrates can be of various regular and irregular shapes and sizes. [0003] A plasma processing apparatus for use in semiconductor material processing includes a reaction chamber including an upper electrode (anode) and a lower electrode (cathode). The substrates to be processed are supported on substrate holders in the reaction chamber. A gas distribution system introduces process gases into the reaction chamber. A magnetic field established between the anode and cathode gene...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00C23C16/54H01J37/34C23C16/458H01L21/683H01L21/687
CPCH01L21/67109H01L21/67069H01L21/67248H01L21/68714H01J2237/2001C23C16/4586H01L21/6833H01L21/02
Inventor 基思·E.·道森埃里克·H.·兰兹
Owner LAM RES CORP