Method of manufacturing metal oxide semiconductor device

Abstract

The invention discloses a method of manufacturing a metal oxicide semiconductor device which comprises the following steps of: forming a grid, a source region and a drain region on a semiconductor substrate wherein, the two sides of the grid are provided with sidewall spacers; implanting plasma into the grid, the source region and the drain region which achieves non-crystallization of the surface; depositing metals on the surface of the grid, the source region and the drain region; thermal annealing the metal to form a metal silicide layer. The method of the invention can form a barrier layer by an efficient method and the risk of forming sprinkling in the S / D region can be reduced and the production cost can also be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing metal oxide semiconductor (MOS) devices. Background technique [0002] In order to reduce the sheet resistance and parasitic resistance of source / drain electrodes and gates of MOS transistors in ultra-high-speed large-scale integrated circuits, a self-aligned silicide (salicide) process is used. In the self-alignment technology, the reaction product of metal and semiconductor such as silicon (Si), that is, silicide (hereinafter referred to as metal silicide). Metal suicide plays a very important role in VLS / ULSI device technology. In MOS devices, metal silicides are often used to obtain good low resistance contacts. Metal silicides can be used to provide contact surfaces between metal lines and substrate contact areas, such as polysilicon gates, sources and drains on silicon substrates. figure 1 It is a schematic diagram of the p...

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Problems solved by technology

However, the ion implantation process uses ion beam scanning for ion implantation, so there are defects of low production efficiency and high cost.

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