Vacuum smelting method and apparatus for copper-indium-gallium-selenium photovoltaic material

Abstract

The invention provides a method and a device for melting a CIGS photovoltaic material in vacuum. The method comprises the steps as follows: four materials of copper Cu, indium In, gallium Ga and selenium Se are arranged in the same crucible, and are heated in vacuum, along with the rise of the temperature, the Ga and the In with the lowest melting point are melt into liquid first, and then the Se starts to melt; the liquid Se reacts with the liquid In and the liquid Ga violently to release massive heat, so that the temperature in the crucible rises rapidly; the Se, the In and the Ca continuously react with the Cu at a high temperature to release massive heat; finally, the Cu is completely melted and is involved in the combination reaction to form a stable CIGS CuInxGa1-xSe2 compound.

Description

Technical field: [0001] The invention relates to a production method and device for producing solar cell materials, in particular to a smelting method and device for producing copper indium gallium selenide photovoltaic materials. Background technique: [0002] Energy crisis and environmental pollution have become major problems that human beings urgently need to face and solve. Many countries, especially some developed countries, regard the development and utilization of green energy as a national policy and give strong support and encouragement. Solar energy is not only an inexhaustible and inexhaustible natural energy source, but also has a high energy density (the solar energy density is about 1 kW / square meter near the equator), which is convenient for human use; There will be no pollution in the process. Therefore, solar energy is a new energy source that human beings focus on developing, and solar cells are effective equipment for utilizing solar energy to generate ...

AI Technical Summary

Problems solved by technology

[0009] 1. Long production cycle and low production efficiency: the selenization process is generally not less than 6 hours;

[0010] 2. High energy consumption: the boiling point of Se is 685°C, and the temperature of selenization is higher than 685°C;

[0011] 3. High consumption of Se: only part of Se vapor can contact with Cu-In-Ga layer;

[0012] 4. The vapor of Se is highly toxic, which is likely to cause safety accidents: when gaseous Se meets water (including water in the air), it will form gaseous H 2 Se (is a poisonous gas); in addition, gaseous Se is highly corrosive to other metals and easily leaks Se vapor;

[0026] 3. Se vapor is highly toxic to humans

[0028] Based on the above reasons, there is currently no CIGS material produced by one-time smelting in the world.

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