Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing metallic layer registration photoetched mark

A technology of overlay marks and metal layers, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of overlay mark signal deterioration, large grains, etc., to prevent short circuits, improve breakdown voltage, and improve The effect of precision

Active Publication Date: 2010-02-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the relatively large grain of thermal aluminum, this will lead to the deterioration of the signal of the overlay mark

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing metallic layer registration photoetched mark
  • Method for manufacturing metallic layer registration photoetched mark

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The invention is a method for improving the overlay precision of the metal layer by changing the film layer design of the overlay mark in the production of the semiconductor integrated circuit. Attached below figure 2 Introduce in detail the manufacturing process steps of the overlay mark of the present invention:

[0016] (1) Etching away the underlying metal under the overlay mark in the traditional process, here only need to change the pattern on the mask plate, without adding any new etching steps.

[0017] (2) Deposit a layer of insulating medium with low dielectric constant, such as silicon carbide. The method of deposition can be Metal Organic Chemical Vapor Deposition (MOCVD) or Atomic Layer Chemical Vapor Deposition (ALCVD). The dielectric constant of the insulating medium used is about 2.2-3.7, and the thickness of the deposition is about 100-5000 Angstroms

[0018] (3) Then deposit a layer of intermetallic isolation layer.

[0019] (4) Then etch the ou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing overlay marks of a metal layer, which comprises the following steps: (1) a lower metal layer which is arranged under the overlay marks is corroded; (2) next, insulating media with low dielectric coefficients is deposited; (3) a metal isolating layer is deposited on the insulating media; (4) the insulating media is used as a blocking layer of the corrosion, an outer frame of the overlay marks is corroded, then, a tungsten plug is prepared; (5) and finally, the metal deposit is carried out, photoresist is used for photoetching, and an inner frame ofthe overlay marks is prepared. The invention can be used for a preparing technology that the size of a device is continuously reduced, and the precision of the overlay marks is increased.

Description

technical field [0001] The invention relates to a method for preparing a metal layer overlay mark in semiconductor manufacturing Background technique [0002] Current overlay designs are typically (see figure 1 ): The manufacturing process steps of the film layer of the overlay mark in the traditional process are: depositing a layer of intermetallic isolation layer on the metal layer; etching the outer frame of the overlay mark; then making a tungsten plug; metal sputtering deposition; photolithography Resin lithography to make the inner frame of the overlay mark. In this process, there must be a metal layer under the overlay mark as an etching barrier layer. If there is no such barrier layer, the etching depth will have relatively large fluctuations, resulting in the signal intensity of the overlay mark. Unstable; but with this metal layer, the depth of the overlay mark is limited by the thickness of the intermetallic isolation layer, and the depth is relatively stable. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/02
Inventor 陈福成朱骏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP