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Positive electrode for semiconductor light-emitting device

A light-emitting device and semiconductor technology, applied in the field of positive electrodes, can solve problems such as reducing the ohmic contact area, and achieve the effects of improving extraction efficiency and strength and reducing attenuation

Active Publication Date: 2010-02-17
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, research conducted by the present inventors has revealed that the adoption of any of the above techniques reduces the ohmic contact area of ​​the positive electrode with respect to the p-type layer, thereby problematically increasing the driving voltage

Method used

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  • Positive electrode for semiconductor light-emitting device
  • Positive electrode for semiconductor light-emitting device
  • Positive electrode for semiconductor light-emitting device

Examples

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example 1

[0092] figure 2 shows a cross-sectional view of a gallium nitride-based compound semiconductor light-emitting device fabricated in this example, and image 3 Its plan view is shown. The gallium nitride compound semiconductor laminated structure was produced through the following procedures. An AlN buffer layer (6) was formed on a sapphire substrate (1), and on the buffer layer, the following layers were sequentially formed: an undoped GaN undercoat layer (thickness: 8 μm) (3a); Si Doped n-type GaN contact layer (thickness: 2 μm) (3b); n-type In 0.1 Ga 0.9 N clad layer (thickness: 250nm) (3c); including Si-doped GaN barrier layers (5 layers and a final layer, each layer thickness: 16nm) and In 0.2 Ga 0.8 Light-emitting layer (4) of multi-quantum well structure of N well layer (5 layers, each layer thickness: 2.5nm); Mg-doped p-type Al 0.07 Ga 0.93 N clad layer (thickness: 0.01 μm) (5a); and Mg-doped p-type GaN contact layer (thickness: 0.15 μm) (5b). On the p-type GaN ...

example 2

[0109] Except that the thickness of the Pt contact layer (111) of the transparent electrode (11) is adjusted to 1 nm; except that an ITO film having a thickness of 100 nm formed by sputtering is used as the current diffusion layer (112); and except that the bonding pad electrode is formed of Al Except for the reflective layer (13a) of , the procedure of Example 1 was repeated to thereby fabricate a light-emitting device.

[0110] The light-emitting device thus manufactured was evaluated in the same manner as in Example 1, and the forward voltage and emission output were found to be 2.9 V and 5.0 mW, respectively.

[0111] And, the peel strength of the bonding pad electrode was determined by a conventional shear tester. The peel strength was found to be not less than 980 mN (100 gf) on average in a plurality of samples, but peeling occurred at the interface between the bonding pad electrode and the transparent electrode.

example 3

[0115] In this example, a gallium nitride compound semiconductor laminated structure was produced in a similar manner to Example 1 through the following procedures. An AlN buffer layer (6) is formed on a sapphire substrate (1), and on the buffer layer, the following layers are sequentially formed: an undoped GaN underlayer (thickness: 6 μm) (3a); Ge-doped n -type GaN contact layer (thickness: 4μm) (3b); Si-doped n-type In 0.1 Ga 0.9 N clad layer (thickness: 180nm) (3c); including Si-doped GaN barrier layers (5 layers and a final layer, each layer thickness: 16nm) and In 0.2 Ga 0.8 Light-emitting layer (4) of multi-quantum well structure of N well layer (5 layers, each layer thickness: 2.5nm); Mg-doped p-type Al 0.07 Ga 0.93 N-clad layer (thickness: 0.01 μm) (5a); Mg-doped p-type Al 0.02 Ga 0.98 N contact layer (thickness: 0.175 μm) (5b); and Ge-doped n-type GaN tunneling layer (thickness: 20 nm) (not shown). On the Ge-doped n-type GaN tunneling layer of the GaN-based co...

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Abstract

An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bondingpad electrode has a reflecting layer that is in contact with at least the transparent electrode.

Description

[0001] Cross References to Related Applications [0002] This application is based upon an application filed under 35 U.S.C. §111(a) pursuant to 35 U.S.C. §119(e)(1), requiring a provisional application filed under 35 U.S.C. §111(b) on August 9, 2004 Priority of No. 60 / 599,571. technical field [0003] The present invention relates to a positive electrode for a semiconductor light-emitting device, and more particularly, to a transparent positive electrode suitable for a gallium nitride-based compound semiconductor light-emitting device that can emit strong light at a low driving voltage. Background technique [0004] In recent years, GaN-based compound semiconductor materials have been the focus of attention as semiconductor materials for short-wavelength light-emitting devices. By techniques such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), such GaN-based compound semiconductors are formed on substrates (for example, oxide single crys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/40
CPCH01L2924/0103H01L2924/01029H01L2924/0105H01L2924/01078H01L2924/01022H01L2924/01047H01L2924/01049H01L2924/01079H01L2924/01012H01L2924/01013H01L2924/01024
Inventor 三木久幸村木典孝渡边宗隆
Owner TOYODA GOSEI CO LTD
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