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Method for preparation silicon layer with vapor-phase deposition technique on the surface of base material

A vapor deposition, substrate surface technology, applied in the direction of metal material coating process, coating, electrical components, etc., can solve the problems of complex and expensive safety measures, flammability and spontaneous combustion

Inactive Publication Date: 2007-08-01
DEGUSSA AG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of these compounds is their flammability or even pyrophoric properties, especially in the case of monosilane
Complicated and costly safety measures are therefore required for the industrial use of said compounds

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] The invention can generally be implemented as follows:

[0049] The substrate to be coated is generally wet-chemically pretreated as described above and introduced in the usual manner into a reaction chamber filled with argon or hydrogen and heated to a temperature suitable for the decomposition of the precursors. SiCl 4 Evaporated in a suitable manner, doped if required, and mixed with argon and / or hydrogen in a molar ratio based on hydrogen, for example 1-100% SiCl 4 . The gas mixture can then be introduced into a reaction chamber where a layer of silicon is deposited on the heated substrate surface. The process of the invention is suitable for operation at atmospheric pressure. However, it is also possible to work under reduced or increased pressure. The resulting reaction by-products are generally removed and discarded. The substrates coated in this way can advantageously be further used in a known manner for the production of solar cells.

[0050] The subject...

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PUM

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Abstract

The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.

Description

technical field [0001] The invention relates to a method for producing a silicon layer by vapor deposition on a substrate surface starting from a silicon-based precursor. In addition, the invention also relates to new applications of solar cells and silicon tetrachloride. Background technique [0002] The production of solar cells at an ever-increasingly low cost is an ever-sought goal. [0003] The basic structure of a solar cell is usually based on a base contact, an electroactive absorber layer that can be coated on a substrate that does not have solar cell properties, an emitter layer on which an emitter contact is coated, and an emitter layer on which is coated Anti-reflective layer / passivation layer for pole contacts. The current leading type of solar cell, the so-called silicon wafer solar cell, consists of 200-300 μm thick Si wafers. In addition to consuming a large amount of silicon during the preparation of the silicon wafer, a large amount of silicon is also lo...

Claims

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Application Information

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IPC IPC(8): C23C16/24C23C16/448C23C16/52H01L31/0216
CPCC23C16/24Y02E10/546Y02E10/52H01L31/04H01L31/03921H01L31/182Y02P70/50H01L21/0262
Inventor R·桑南舍恩H·劳勒德H·J·霍恩S·勒伯N·施林杰
Owner DEGUSSA AG