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Composition including polyamide acid for forming lower layer reflection preventing film

A technology of anti-reflection film and polyamic acid, which is applied in the photographic process of patterned surface, photosensitive material used in optomechanical equipment, optics, etc., can solve the problems of insufficient satisfaction and achieve excellent absorption effect

Inactive Publication Date: 2007-08-01
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although there is research on the lower antireflection film that can be developed and removed simultaneously with the photoresist (for example, refer to Patent Document 2, Patent Document 3, Patent Document 4, Patent Document 5, and Patent Document 6), from From the viewpoint of adaptability to microfabrication and the shape of the pattern, there are still no proposals that fully meet the needs

Method used

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  • Composition including polyamide acid for forming lower layer reflection preventing film
  • Composition including polyamide acid for forming lower layer reflection preventing film
  • Composition including polyamide acid for forming lower layer reflection preventing film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] (Synthesis of polyamic acid)

[0114] By adding 17.8g of 4,4'-(hexafluoroisopropylidene)diphthalic dianhydride, 3.12g of 3,5-diaminobenzoic acid, and 4.92g of bis(4-aminophenyl)sulfone It was made to react at 80 degreeC for 20 hours in propylene glycol monomethyl ether 145.6g, and the solution [A] containing a polyamic acid was obtained. The obtained polyamic acid has structures represented by formula (40) and formula (41).

[0115]

[0116] (Determination of molar absorptivity of light-absorbing compounds)

[0117] The molar absorptivity of a light-absorbing compound is determined by the following method.

[0118] Light-absorbing compounds were made 4 x 10 using N,N-dimethylformamide -6 (g / ml) solution. The absorbance of the solution was measured using a UV measuring device UV2550 manufactured by Shimadzu Corporation. The molar absorptivity is calculated by [molar absorptivity]=[absorbance] / [mass concentration of solution / molecular weight of light-absorbing com...

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Abstract

The invention provides a lower layer reflection preventing film forming composition, which is to be used in a lithography process of semiconductor device manufacture for forming a lower layer reflection preventing film which can be developed by an alkaline developer used for photoresist development, and to provide a method for forming a photoresist pattern using the lower layer reflection preventing film forming composition. A lower layer reflection preventing film forming composition includes a polyamide acid, a compound having at least two epoxy groups, a light absorbing compound having a molar light absorption coefficient of 5,000-100,000 (l / molm) to light having a wavelength of 365nm, and a solvent.

Description

technical field [0001] The present invention relates to a composition for forming an underlayer antireflection film used in a photolithography process for manufacturing a semiconductor device, and a method for forming a photoresist pattern using the composition for forming an underlayer antireflection film. In particular, it relates to a composition for forming an underlayer antireflection film used in a photolithography process using i-line (wavelength: 365 nm) or g-line (wavelength: 432 nm). More specifically, it relates to a composition for forming a lower antireflection film for forming a lower antireflection film that can be developed under the action of an alkaline developer for a photoresist, and the composition for forming a lower antireflection film by using the composition for forming a lower layer antireflection film. A method of simultaneously developing a photoresist and an underlying antireflection film to form a photoresist pattern. Background technique [00...

Claims

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Application Information

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IPC IPC(8): G03F7/11H01L21/027
CPCG03F7/091
Inventor 畑中真坂口崇洋榎本智之木村茂雄
Owner NISSAN CHEM IND LTD
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