Method of preparing carbon/carbon-silicon carbide ceramics base composite material
A technology of silicon carbide ceramic matrix and composite materials, which is applied in the field of preparation of carbon/carbon-silicon carbide ceramic matrix composite materials, can solve the problems of limited material structure control, etc., to alleviate modulus mismatch, increase energy, and improve toughness Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0015] Embodiment 1: (1) A two-dimensional prefabricated body is prepared by laminating 1K plain weave carbon cloth, and the volume percentage of fibers is 40%;
[0016] (2) With propylene as the source material and argon as the dilution gas, the PyC interface was deposited by chemical vapor infiltration, the deposition temperature was 900 °C, and the deposition time was 100 h;
[0017] (3) Carry out heat treatment on the PyC interface, the heat treatment temperature is 1600°C, and the time is 1h;
[0018] (4) with trichloromethylsilane (CH 3 SiCl 3 , MTS) is the source material, argon is the diluent gas, hydrogen is the carrier gas, H 2 The molar ratio of MTS and MTS is 10:1, the SiC matrix is deposited on the PyC interface by chemical vapor infiltration, the deposition temperature is 1000 ° C, and the deposition time is 40 h;
[0019] (5) Deposit the PyC substrate twice successively on the SiC substrate, and the deposition time is 25 hours each;
[0020] (6) Deposit th...
Embodiment 2
[0026] Embodiment 2: (1) adopt 1K plain weave carbon cloth lamination to prepare two-dimensional prefabricated body, the volume percent of fiber is 43%;
[0027] (2) With propylene as the source material and argon as the diluent gas, the PyC interface was deposited by chemical vapor infiltration method, the deposition temperature was 950 °C, and the deposition time was 150 h;
[0028] (3) Perform heat treatment on the PyC interface, the heat treatment temperature is 1700°C, and the time is 2h;
[0029] (4) with trichloromethylsilane (CH 3 SiCl 3 , MTS) is the source material, argon is the diluent gas, hydrogen is the carrier gas, H 2 The molar ratio to MTS is 10:1, and the SiC substrate is deposited on the PyC interface by chemical vapor infiltration method, the deposition temperature is 1050 ° C, and the deposition time is 40 h;
[0030] (5) Deposit the PyC substrate twice successively on the SiC substrate, and the deposition time is 25 hours each;
[0031] (6) Deposit th...
Embodiment 3
[0037] Embodiment 3: (1) adopt three-dimensional four-step method to weave carbon fiber into three-dimensional prefabricated body, the volume percentage of fiber is 45%;
[0038] (2) With propylene as the source material and argon as the dilution gas, the PyC interface was deposited by chemical vapor infiltration method, the deposition temperature was 1000 ° C, and the deposition time was 200 h;
[0039] (3) Perform heat treatment on the PyC interface, the heat treatment temperature is 1800°C, and the time is 3h;
[0040] (4) with trichloromethylsilane (CH 3 SiCl 3 , MTS) is the source material, argon is the diluent gas, hydrogen is the carrier gas, H 2 The molar ratio to MTS is 10:1, and the SiC substrate is deposited on the PyC interface by chemical vapor infiltration method, the deposition temperature is 1100 ° C, and the deposition time is 80 h;
[0041] (5) Deposit the PyC substrate on the SiC substrate, the deposition time is 25h;
[0042] (6) Deposit the SiC substra...
PUM
Property | Measurement | Unit |
---|---|---|
tensile strength | aaaaa | aaaaa |
tensile strength | aaaaa | aaaaa |
tensile strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com