Semiconductor laser self-mixing effect based high reflectivity measurement method

A technology with high reflectivity and measurement method, which is applied in the field of measuring optical component parameters, can solve the problems of poor pulse laser beam quality, high cost of pulse laser system, and high system alignment requirements, and achieve high-precision determination of reflectivity and large measurement range , high precision effect

Inactive Publication Date: 2007-10-17
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantages of this method are: due to factors such as poor quality of pulsed laser beams and mode competition in the ring-down cavity, the measurement accuracy is limited; moreover, due to the high cost of the p...

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  • Semiconductor laser self-mixing effect based high reflectivity measurement method
  • Semiconductor laser self-mixing effect based high reflectivity measurement method
  • Semiconductor laser self-mixing effect based high reflectivity measurement method

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Embodiment Construction

[0027] As shown in Figure 1, the measuring device of the present invention consists of a light source 1, an iris diaphragm 2, a spatial filter and a telescopic system 3, a plano-concave high mirror 4,5, a converging lens 6, a detector 7, and a trigger switch circuit 8 , an oscilloscope or a data acquisition card 9 and a computer 10. The thick line in the figure indicates the optical path, and the thin line indicates the connection of the signal line. The detector 6 generally adopts a photodiode or a photomultiplier tube detector.

[0028] The light source 1 is a continuous semiconductor laser. The iris diaphragm 2 is used to control the intensity of the backward feedback light, and a linear polarizer, an attenuation film or an optical isolator can also be used, or the pitch of the first cavity mirror can be adjusted, or the distance between the semiconductor laser and the first cavity mirror can be adjusted. The distance between them along the direction of the optical path m...

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Abstract

The invention discloses a method for measuring high reflectivity based on self-mixing effect of semiconductor laser which belongs to the technical field of measuring optical elements parameter. The present cavity ringdown technique for determining high reflectivity by measuring ringdown time, using the self-mixing effect of semiconductor laser, improves laser power to coupling efficiency of ringdown cavity by controlling back feedback optical intensity of continuous wave semiconductor laser, greatly improves the signal-noise ratio of cavity outputting signal, thereby improving measuring precision and measuring range of high reflectivity. The methods for controlling back feedback optical intensity which can make the cavity output signal reach the maximum include: inserting a linear polarizer, an attenuation plate, an optical isolator or a variable aperture between the semiconductor laser and the first cavity mirror, or adjusting the pitching of the first cavity mirror, or changing the distance of the laser and the first cavity mirror.

Description

technical field [0001] The invention relates to a method for measuring optical element parameters, in particular to an improved high reflectivity measurement method. Background technique [0002] The wide use of high reflectivity optical components in laser systems urgently requires accurate measurement of high reflectivity, and traditional methods can no longer meet the measurement accuracy requirements of high reflectivity. Chinese Patent Application No. 98114152.8, Publication No. CN1242516A, the patent of invention published on January 26, 2000 discloses "a method for measuring the high reflectivity of mirrors", using a pulsed laser system as the light source, incident on two high-reflective mirrors The formed optical resonant cavity receives the exponential attenuation signal of the optical cavity, respectively determines the ring-down time T- of the straight cavity and the ring-down time T< of the folded cavity, and calculates the reflectivity R of the mirror to be ...

Claims

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Application Information

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IPC IPC(8): G01M11/02G01N21/55
Inventor 龚元李斌成
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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