Flash memory data read-write processing method

Abstract

The invention publics a flash disk data read-write processing method, which includes the following steps: 1) in the flash disk data store process, in advance coding the waited binary system data, and after the coding process the numbers of the 0 in the binary system data are less than before coding; then writes the binary system data in the memory cell of the flash disk; 2) in the flash disk data fetching process, first read-out the coded binary system data of the flash disk storage unit, then carries on the decode deposition of the binary system data which corresponds with the step 1) code processing. The invention method can reduces the flash disk chip loss when read-in and erasures operation, extents the chip the service life; may also enhances read-in and erasures operation efficiency, reduces the operating time; As well as reduces the power loss of the flash disk operation.

Description

Technical field [0001] The invention relates to a flash memory data read and write processing method, and in particular to a method for optimizing flash memory operation by encoding and decoding data. Background technique [0002] Flash memory is an important storage device. Flash memory can read and write data and erase multiple times. It also has high density, large capacity, low read and write operation time, non-volatility, low power consumption, etc. The characteristics are more and more widely used in personal computers, various digital electronic equipment and other various digital storage equipment fields; in recent years, its process technology has become more mature, the cost price has gradually decreased, and the back-end application technology has become more and more perfect. All of these have greatly stimulated the development of the flash memory market, making it gradually equal to the hard disk in the storage field. However, due to some problems in its own manufac...

AI Technical Summary

Problems solved by technology

On the other hand, the writing and erasing operations of flash memory chips are quite special. Flash memory chips are written in units of pages and erased in units of blocks. The writing and erasing operations of flash memory generally take a long time The time for each page of data to be written from the internal cache of the flash memory chip is 200us-700us, and the block erase operation time is 2ms. At the same time, the time of these operations is closely related to the process of the flash memory chip. The erase operation of flash memory, Configure all the memory cells in the block to state 1. During the data writing process, if the data to be written is 1, then there is no need to reprogram the flash memory cell corresponding to the data, and if it is 0, it needs to be reprogrammed. That is to charge the suspended gate, and at the same time, before writing data to the page next time, an erase operation must be performed on it, and those memory cells that are written as 0 will be discharged again. Therefore, the page data during one operation The more the number of 0s in , the more memory units the page needs to be consumed

Images