Crystalline thin film and process for manufacturing thereof, and element, circuit and device employing crystalline thin film
A crystal and thin film technology, applied in the direction of circuits, electrical components, crystal growth, etc., can solve the problems of low density, difficult control of the position of crystal grain formation, and no verification
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0096] A crystalline silicon thin film formed by the method shown in FIGS. 1A to 1H is described as Embodiment 1 of the present invention.
[0097] An amorphous silicon film containing crystalline silicon clusters was formed to a thickness of 50 nm by vapor deposition on a substrate composed of silicon dioxide and other components and having an amorphous surface. This amorphous silicon film containing crystalline silicon clusters was irradiated with an energy beam from the surface side (locally excluding a small area of 1 μm diameter), thereby partially amorphizing the crystalline silicon clusters in the irradiated area of the film. The obtained film was used as a starting film.
[0098] This initial film was treated with a KrF excimer laser beam at approximately 200 mJ / cm 2 The energy density is irradiated for 30 nanoseconds to melt and resolidify to obtain a crystal thin film.
[0099] The crystal grain shape of the formed crystal thin film was examined. As a result, ...
Embodiment 2
[0103] Another crystalline silicon thin film formed by the method shown in FIGS. 1A to 1H is described as Embodiment 2 of the present invention.
[0104] In the same manner as in Example 1, an amorphous silicon film containing crystalline silicon clusters was formed to a thickness of 50 nm by vapor deposition on a substrate mainly composed of silicon dioxide and having an amorphous surface. This amorphous silicon thin film containing crystalline silicon clusters was irradiated with an energy beam from the surface side (partially excluding a small area of 0.7 µm in diameter), thereby obtaining a starting thin film. In this example, unlike Example 1, the crystalline silicon clusters contained in the thin film become completely amorphous in the region where the energy beam is irradiated.
[0105] This starting film was treated with an ArF excimer laser beam at approximately 210 mJ / cm 2 The energy density is irradiated for 30 nanoseconds to melt and resolidify to obtain a cryst...
Embodiment 3
[0110] A third crystalline silicon thin film formed by the method shown in FIGS. 1A to 1H is described as Embodiment 3 of the present invention.
[0111] A polysilicon film having a thickness of 80 nm was formed as a starting film on a substrate having an amorphous surface composed of an inorganic silicon compound by vapor deposition. Deposition of the initial film by means of selective deposition, at about 2 μm 2 Average diameters of about 300 nm were obtained in small regions of , and about 100 nm in other regions in the plane of the film.
[0112] This starting film was treated with a XeCl excimer laser beam at approximately 300 mJ / cm 2 The energy density is irradiated for 40 nanoseconds to melt and resolidify to obtain a crystal thin film.
[0113] The crystal grain shape of the formed crystal thin film was examined. found that single grains have been centered at about 2µm 2 The above-mentioned small regions grow around to a particle size of about 3 μm in diameter. Th...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| The average diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More