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Organometallic compounds

An organometallic and compound technology, applied in the direction of ruthenium organic compounds, nickel organic compounds, magnesium organic compounds, etc., can solve the problems of not being able to provide volatility and thermal stability

Inactive Publication Date: 2008-02-13
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such compounds may not provide the desired balance of volatility and thermal stability (or other properties) under certain ALD conditions

Method used

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  • Organometallic compounds
  • Organometallic compounds

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Diisopropylacetamidinated (1-dimethylamino)allyl(η6-p-cymene)ruthenium ((1-dimethylamino)allyl(η6-p-cymene) is expected to be synthesized as follows ruthenium diisopropylacetamidinate):

[0038]

[0039] Reaction of dichloro(η6-p-cymene)ruthenium dimer with lithium diisopropylacetamidine in THF at room temperature (approximately 25°C) in a three-neck round bottom flask equipped with a magnetic force Devices for stirring or mechanical stirring and effective heating / cooling systems to control the reaction rate. After the mixture was stirred overnight at room temperature, (1-dimethylamino)allylmagnesium bromide was added at low temperature (about -30°C). The resulting mixture was then stirred overnight under an inert atmosphere of nitrogen. The reagents were added in a continuous dropwise fashion with slow mixing to control the exotherm of the reaction. The crude product can then be isolated from the reaction by filtration in expected higher yields. The target produ...

Embodiment 2

[0041] Bis(1-dimethylaminoallyl)bis(cyclopentadienyl)zirconium(IV) is expected to be synthesized by:

[0042]

[0043] At low temperature (about -30°C), in a three-neck round bottom flask, bis(cyclopentadiene) zirconium dichloride reacts with (1-dimethylamino)allyl magnesium bromide in THF, and the flask is equipped with There are devices for magnetic or mechanical stirring and efficient heating / cooling systems to control the reaction rate. The mixture was stirred overnight at room temperature. The crude product can then be isolated from the reaction by filtration in expected higher yields. The target product is expected to be substantially free of organic solvents (<0.5 ppm) as determined by FT-NMR and substantially free of metal impurities (<10 ppb) as determined by ICP-MS / ICP-OES.

Embodiment 3

[0045] The organometallic compounds of the general formula listed in the table below can be prepared according to the procedure described in Example 1 or 2.

[0046] sample

M

n

EDG

y’ / y”

R 1 / R 2

R 3 / R 4

R 5 / R 6

L 1

L 2

A

Mg

1

NMe 2

0 / 1

-

H / H

H / H

OEt

-

B

Ga

1

N(Et)Me

0 / 1

-

H / H

H / H

H, H

-

C

Si

2

N(i-Pr)Me

0 / 1

-

H / H

H / H

AMD,

AMD

-

D

Se

2

Python

0 / 1

-

H / H

H / H

BDK

-

E

Cu

1

N(i-Pr) 2

0 / 1

-

Me / H

H / H

PAMD

VTMS

F

sc

1

NH (Allyl)

1 / 1

H / H

Me / H

H / H

N(Et)Me

-

G

La

1

NMe 2

1 / 1

H / H

Me 2 NCH 2 / H

H / H

DMAP

-

H

Zr...

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Abstract

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

Description

technical field [0001] The present invention relates generally to the field of organometallic compounds. In particular, the invention relates to the field of organometallic compounds useful in thin film chemical vapor deposition or atomic layer deposition. Background technique [0002] In atomic layer deposition ("ALD") methods, conformal thin films are deposited by exposing a surface to alternating two or more chemical reactants. Vapor from the first precursor (or reactant) is allowed to reach the surface on which the desired film is to be deposited. Any unreacted vapors were removed from the system under vacuum. Next, vapor from the second precursor is brought to the surface where it reacts with the first precursor and any excess second precursor vapor is removed. Each step in the ALD process typically deposits a monolayer of the desired film. Repeat this sequence of steps until the desired film thickness is obtained. Generally, the ALD process is performed at relativ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F19/00C07F9/50C23C16/18
CPCC07F9/00C07F15/0046C23C16/18C07F1/08C07F7/00C07F3/02C07F5/00C07F15/04C07F15/0086
Inventor D·V·舍奈-卡特克哈特Q·M·王
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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