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Charge pump output high-pressure control device

A control device and charge pump technology, which is applied to control/adjustment systems, adjustment of electrical variables, and conversion equipment without intermediate conversion to AC. problem, to achieve the effect of small rise time and hold time, small change, and simple structure

Active Publication Date: 2008-03-05
SANECHIPS TECH CO LTD
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  • Summary
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

In this way, this patent can only control the time when the charge pump outputs high voltage and cannot set a specific high voltage rise time
[0011] To sum up, the current existing technology cannot control the charging process of the charge pump to obtain a specific rise time, only a specific hold time

Method used

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  • Charge pump output high-pressure control device
  • Charge pump output high-pressure control device
  • Charge pump output high-pressure control device

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Embodiment Construction

[0055] The specific implementation of the device of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0056] The reference voltage generation circuit in the device of the present invention is mainly composed of a reference voltage current source X0 and a pattern generation circuit X1, see FIG. 3 for the specific circuit.

[0057] The specific connection of the reference voltage generation circuit is as follows: the external adjustment signal ADJ is input into the reference voltage current source X0; the reference voltage current source X0 outputs two reference voltage signals VBG and VNREF, both of which are output to the mode generation circuit X1; the external enable The signal EN is input to the mode generation circuit X1, and the mode generation circuit X1 generates VREF of a specific waveform and outputs it to the charge pump system to control the process of the charge pump generating high voltage Vpp, so as to...

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Abstract

The charge-pump output high-pressure controlling device comprises a reference voltage producing circuit which consists of a reference voltage-current source and a mode producing circuit, external regulation signals are input into the reference voltage-current source which outputs two reference voltage signals to be accessed to the input end of the mode producing circuit. External enable signal is accessed into the input end of the mode producing circuit which outputs then the output signal of the reference voltage producing circuit. Advantage: reference voltage with specific rise-time and retention time which can be changed by regulating the reference current for charging a fixed capacitor or the capacitance value; The change of rise-time and retention time of reference voltage is small in all range of working temperature when ADJ set value is not changed, so that the high-voltage output by charge pump has same mode and the peak value of it is stable.

Description

technical field [0001] The present invention relates to a device for controlling the output high voltage of a charge pump, which is mainly used in an Electrically Erasable Programmable Read-Only Memory (EEPROM) to control the charge pump to generate a high voltage for writing and erasing a basic storage unit, thereby protecting the basic The writing and erasing process of the storage unit reduces the probability of operation failure. Background technique [0002] Non-volatile memory is widely used in data processing, and EEPROM is a widely used non-volatile memory. [0003] EEPROM uses a high-voltage Vpp generated by an on-chip charge pump to program the basic storage unit. This voltage is generally 14 volts, which is much higher than the power supply voltage when the chip is working normally. In order to protect the oxide layer of the basic memory cell, the programming high voltage Vpp is required to have a specific rise time tr, fall time tf, hold time th and precise outp...

Claims

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Application Information

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IPC IPC(8): G11C16/30G11C5/14H02M3/07G05F3/24
Inventor 周海牛李梅周莉
Owner SANECHIPS TECH CO LTD
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