TFT matrix structure and making method thereof

Abstract

The invention discloses a TFT array structure, which comprises a substrate; a gate line and a gate electrode; a first insulating layer, a semi-conductive layer and an ohmic contact layer which are covered in order on the gate line and the gate electrode; a thin film transistor (TFT) groove; a second insulating layer formed on the ohmic contact layer; a source / drain electrode through hole formed on the second insulating layer; data lines and a source electrode integrated with the data lines and connected with the ohmic contact layer on the gate electrode; a drain electrode connected with the ohmic contact layer on the gate electrode; a passivation layer formed on the data lines, the source electrode and the drain electrode; a pixel electrode formed on the second insulating layer and partially lapped on the drain electrode; and a groove formed on the gate line between the data lines to cut off the ohmic contact layer on the gate line. The invention also discloses a fabrication method of the array structure. The inventive array structure and the fabrication method thereof shorten the production cycle of the TFT array and reduce the production cost.

Description

technical field [0001] The invention relates to a thin film transistor (TFT) matrix structure and a manufacturing method thereof, in particular to a TFT matrix structure prepared by four photolithography and a manufacturing method thereof. Background technique [0002] Liquid crystal display mode is the mainstream of flat panel display at present, and active drive TFT LCD (thin film transistor liquid crystal display) is the dominant display mode in the field of liquid crystal display. The manufacturing process of TFT LCD is compatible with traditional IC circuits. It has excellent display quality, low power consumption, light weight, and no radiation. It is a very friendly human-machine communication interface. Its main application fields are notebook computers and desktop computer monitors. , workstations, industrial monitors, global satellite positioning system (GPS), personal data processing, game consoles, videophones, portable VCD, DVD and other portable devices. [00...

AI Technical Summary

Problems solved by technology

[0004] Although the four-step lithography process has made some progress compared with the traditional five-step lithography process, there are still several major disadvantages: First, the multi-step etching process is complicated, the development is difficult, and some defects will inevitably occur , such as metal Mo residues, rough surface of the channel, etc.

The second is that the lateral etching produced in Mo dry etching will affect the width-to-length ratio of the channel, resulting in changes in the electrical characteristics of TFT, such as low on-state current, etc.

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