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Method for preparing P-type transparent conductive oxide CuAlO2 film

A transparent conductive and oxide technology, used in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of lack of large-scale production capacity, high production cost, and large deposition area.

Inactive Publication Date: 2010-06-02
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to aim at the p-type CuAlO existing in the prior art 2 The thin film deposition area is small, the production cost is high, and there is no problem of large-scale production capacity. To provide a P-type transparent conductive oxide CuAlO with a large deposition area and low production cost, which is suitable for industrial production 2 Film Preparation Method

Method used

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  • Method for preparing P-type transparent conductive oxide CuAlO2 film
  • Method for preparing P-type transparent conductive oxide CuAlO2 film
  • Method for preparing P-type transparent conductive oxide CuAlO2 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) With chemically pure Cu 2 O powder and analytically pure Al(OH) 3 The powder is used as the raw material, and it is pre-calcined at 500°C for 1 hour using a high-temperature solid-state reaction method, and then calcined at 1100°C for 10 hours to fully react to form pure-phase delafossite structure CuAlO 2 powder, on CuAlO 2 Powder ball milling mixed with glue and pressed into tablets, after removing the glue, sintered at 1100°C for 4h to make CuAlO 2 Ceramic target. Its XRD spectrum (see figure 1 ) is fully consistent with CuAlO 2 PDF35-1401 Diffraction Standard Spectrum.

[0020] (2) Deposit CuAlO on Si(100) substrate by magnetron sputtering method 2 Thin film, the substrate temperature is 300°C, the working pressure is 0.8Pa, the oxygen partial pressure is 20%, the sputtering power is 100W, under the protection of nitrogen atmosphere, after annealing at 900°C for 2h, P-type CuAlO is obtained 2 film, its XRD spectrum is shown in figure 2 .

Embodiment 2

[0022] The substrate temperature is 400°C, the working pressure is 0.9Pa, and other preparation conditions are the same as in Example 1. The XRD spectrum of the obtained film is shown in figure 2 .

Embodiment 3

[0024] The substrate temperature is 500°C, the working pressure is 1.0Pa, annealed at a temperature of 1100°C for 4h, other preparation conditions are the same as in Example 1, and the XRD spectrum of the obtained film is shown in figure 2 .

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Abstract

The invention relates to a preparation method of a P type translucent conductive oxide CuAlO2film. The steps of the method are that chemically pure Cu2O powder and analytically pure Al(OH)3powder are preheated at 500 to 550 DEG C for 1 to 1.5 hours, temperature preserved at 1050 to 1150 DEG C for 8 to 12 hours, and pure phase CuAlO2 powder is produced; the CuAlO2 powder is pressed and molded and sintered at 1050 to 1150 DEG C for 4 to 10 hours, to prepare CuAlO2 ceramics target. The prepared CuAlO2 ceramics target adopts the magnetron sputtering, takes the Si(100) single crystal or quartz as underlayer with a temperature of 300 to 600 DEG C, and takes the mixed gas of high pure argon and oxygen as working gas, with working pressure 0.8 to 1.0Pa, oxygen partial pressure 10 to 40%, and sputtering power 100 to 200W; after being treated by film deposition, the ceramics target is annealed in a tubular furnace for 2to 5 hours in a nitrogen atmosphere protection condition to prepare the P type CuAlO2 film, and the film is provided with a thickness ranging from 100 to 500nm. The method of the invention has advantages of large deposition area and low production cost, and is suitable for industrialized production.

Description

technical field [0001] The invention belongs to the field of material preparation, in particular to a P-type transparent conductive oxide CuAlO 2 Preparation method of thin film material. Background technique [0002] With the rapid development of semiconductor technology, especially transparent conductive oxide (Transparent conductive oxide-TCO) thin film technology, transparent electronic devices will be more widely used in solar cells, flat-panel displays, special function window coatings and Other fields of optoelectronic devices. Among many transparent conductive oxide TCO thin film materials, In 2 o 3 : Sn (ITO) thin film material is one of the most important TCO thin film materials, and has always been used as the first choice material of TCO thin film in flat panel display, but its metal In is a kind of rare element, and its cost is higher. In recent years, people are constantly looking for materials that can replace ITO thin films in flat panel displays, and a l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B25/06H01L31/18
CPCY02P70/50
Inventor 张铭董国波兰伟董培明严辉
Owner BEIJING UNIV OF TECH
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