Making technology method for flash memory
A manufacturing process and flash memory technology, which is applied in the field of semiconductor integrated circuit technology to achieve the effects of small impact, improved erasing and writing performance, and favorable subsequent processes
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[0015] The main process steps used in the present invention are as follows: 1. Isolation area / active area formation (same as existing process); 2. High voltage transistors, memory cell well implantation (same as existing process); 3. Floating gate oxidation (co-occurrence) Has craftsmanship, 85 ); 4. Floating gate polycrystalline deposition (same as existing process, 1100 ); 5. A thin oxide film is grown on the surface of the floating gate about 20-50 6. Silicon nitride deposition; 7. Floating gate partial oxidation (same as existing process); 8. Floating gate etching (same as existing process); 9. The subsequent steps are also the same as the existing process.
[0016] The present invention is compared with the existing process: Steps 1 to 4 are the same as the existing process. After the floating gate is oxidized, a layer of polysilicon is deposited on the surface; after that, a process is added, that is, a layer of polysilicon is grown on the surface with a thickness of 20 ~...
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