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Shower plate and method for manufacturing the same

A manufacturing method and spray plate technology, applied in the field of spray plates, can solve the problems of uneven porosity, unevenness, particles, etc., and achieve the effect of preventing the transfer of cracks

Inactive Publication Date: 2008-05-07
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the shower plate made of this porous body is manufactured by molding and sintering raw materials mixed with alumina and resin in a predetermined ratio, there are bound to be deviations in the mixing and distribution of the resin, as well as firing unevenness and porosity. The rate is uneven, so it is difficult to provide a stable and interchangeable spray plate
In addition, in the shower plate made of porous ceramics, grinding chips and particles generated during the final finishing of the external dimensions adhere to the pores with complex shapes, and there is a problem that particles are generated during actual production.

Method used

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  • Shower plate and method for manufacturing the same
  • Shower plate and method for manufacturing the same
  • Shower plate and method for manufacturing the same

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Embodiment

[0139] Hereinafter, the shower plate and its manufacturing method of the present invention will be described with reference to FIG. 1 .

[0140] First, in Al with a purity of more than 99.95% 2 o 3 The fine powder is blended to adjust 0.1 to 5% by mass of Y with a purity of 99.9% or more 2 o 3 The raw material powder for sintering is composed of fine powder, and the adjusted raw material powder for sintering is formed by the cold isostatic pressing (CIP) method to obtain a disc shape formed into the shape of the sintering shrinkage residue and the finishing residue. body. In addition, from the lateral direction of the disc-shaped molded body toward the center of the disc, using a short drill corresponding to the diameter (Φ1 mm) of the gas introduction passage 3 of the shower plate product, the inlet part 3a is processed, and then, Along the axis of the entrance part 3a, use a long drill to drill and process the long hole 3b, and process it to the center of the circular pl...

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Abstract

Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage 3 and a large number of blowing holes 2 for a compact stage are bored in the disc-shaped compact, and then the disc-shaped compact is sintered. Subsequently, the gas inlet passage 3 and a main hole portion 2b in each of the blowing holes are subjected to grinding to have a surface roughness of 1 s or less. Further, a lapping wire having a taper-shaped end is inserted into an outlet port 2a of the blowing hole 2, and reciprocatingly moved while being slidingly displaced in such a manner that a portion of the lapping wire located in the outlet port 2a is gradually increased in wire diameter, so that the outlet port 2a is lapped to have a diameter of from 0.1 mm to less than 0.3 mm, a dimensional accuracy within ± 0.002 mm, and a surface roughness of 1 s or less.

Description

technical field [0001] The present invention relates to a shower plate used for uniformly supplying process gas onto a large substrate (wafer: wafer) in semiconductor manufacturing, and a method for manufacturing the same. Background technique [0002] Conventionally, semiconductor manufacturing equipment such as a CVD apparatus and a dry etching apparatus for supplying a process gas to the surface of a wafer to form a film is used in a semiconductor manufacturing process. [0003] In these semiconductor manufacturing apparatuses, a high-frequency voltage is applied between a wafer and a shower plate from which a process gas is sprayed, and the process gas is brought into a plasma state, whereby a thin film is formed on the surface of the wafer and the surface of the wafer is etched. [0004] Since it is necessary to provide a plurality of fine spray holes on the shower plate, plates such as aluminum or silicon are used in terms of workability, but it is difficult to achieve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205B24B37/00C23C16/455B24B1/04H01L21/3065
CPCC04B2235/3206C04B2235/77B24B5/485C23C16/45565C04B35/6455C04B2235/3229C04B2235/945C04B2235/3225B24B1/04C04B35/111Y10T29/49996H01J37/3244H01L21/67069
Inventor 桶作正广大见忠弘
Owner TOKYO ELECTRON LTD