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Polishing composition and polishing method

A grinding method and composition technology, applied to polishing compositions containing abrasives, chemical instruments and methods, grinding devices, etc., can solve the problems of large ceria abrasive grains and complicated washing

Inactive Publication Date: 2008-05-14
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to obtain a sufficient polishing speed of the silicon dioxide film for practical use, the average primary particle diameter of the ceria abrasive grains must be relatively large, so the slurry containing the ceria abrasive grains tends to produce a lot of abrasive particles on the polished surface. defect
In addition, ceria abrasive grains tend to remain on the ground surface in the form of residue, and the washing after grinding is very complicated.

Method used

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  • Polishing composition and polishing method
  • Polishing composition and polishing method
  • Polishing composition and polishing method

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Embodiment Construction

[0015] One embodiment of the present invention is described below.

[0016] The polishing composition of this embodiment is prepared by mixing colloidal silica, an acid, and water so that the pH becomes 1-4. Thus, the polishing composition contains colloidal silica, acid and water. This polishing composition is suitably used for polishing a silicon dioxide film, especially for polishing a silicon dioxide film provided on a silicon substrate or a polysilicon film.

[0017] The above-mentioned colloidal silica has the function of mechanically polishing the silica film, and exerts the function of increasing the polishing rate of the silica film with the polishing composition. Colloidal silica can be synthesized by various methods, but the sol-gel method is preferable because it minimizes the contamination of impurity elements. Synthesis of colloidal silica by the sol-gel method is usually performed by dropping methyl silicate into a solvent containing methanol, ammonia, and wat...

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Abstract

To provide a polishing composition suitable for use to polish a silicon dioxide film, particularly for use to polish a silicon dioxide film formed on a silicon substrate or a polysilicon film, and a polishing method by means of such a polishing composition. The polishing composition of the present invention comprises a colloidal silica having a degree of association of more than 1, and an acid, and has a pH of from 1 to 4. The acid is preferably at least one member selected from the group consisting of a carboxylic acid and a sulfonic acid. This polishing composition preferably further contains an anionic surfactant. The anionic surfactant is preferably a sulfuric acid ester or a sulfonate.

Description

technical field [0001] The present invention relates to a polishing composition used for polishing a silicon dioxide film, particularly for polishing a silicon dioxide film provided on a silicon substrate or a polysilicon film, and a polishing method using the polishing composition. Background technique [0002] As semiconductor device isolation technology, LOCOS technology (Local Oxidation of Silicon) for selectively forming a silicon dioxide film for device isolation on a silicon substrate is known. However, this has a problem of reduced element area due to lateral diffusion of the silicon dioxide film and bird's beak effect. Therefore, as a new semiconductor element isolation technology, STI (Shallow Trench Isolation) technology has been developed and applied. [0003] In STI technology, a silicon dioxide film and silicon nitride are usually sequentially formed on a silicon substrate, patterned through a photoresist, and then a trench is formed. After removing the resis...

Claims

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Application Information

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IPC IPC(8): C09K3/14B24B37/04B24B29/00H01L21/304B24B37/00
CPCC09G1/02H01L21/31053C09K3/1463C09K3/14
Inventor 吴俊辉
Owner FUJIMI INCORPORATED
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