Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Compound blue crystal underlay substrate and method for producing the same

A substrate substrate and crystal technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high substrate price, high cost, high hardness, etc., and achieve improved scribing yield, low cost, and good thermal performance Effect

Inactive Publication Date: 2010-07-14
ZHEJIANG SINGBEE LIGHTING TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above sapphire crystal (a-Al 2 o 3 ) high technical defect of the substrate price, the purpose of this utility model is to provide a kind of composite sapphire substrate substrate, which overcomes the sapphire (a-Al 2 o 3 ) high hardness, high cost and other shortcomings, improve the yield of sapphire / GaN LED chips, can replace the existing sapphire substrate, and accelerate the development of LED lighting in terms of energy saving

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound blue crystal underlay substrate and method for producing the same
  • Compound blue crystal underlay substrate and method for producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The schematic diagram of the gas phase transport equilibrium (VTE) experimental device used in the present invention is as figure 2 Shown, in the platinum crucible 5, be placed with air hole 8, the Li of the same certain ratio 2 SiO 2 and Li 2 O compound block 9, platinum wire 7 is placed on the compound block 9, and the blue crystal wafer 6 of fine grinding or polishing is placed on the platinum wire 4 through rough grinding, and the platinum sheet is placed on the compound block 9, and also covered Li 2 SiO 2 and Li 2 O the mixture block 3, the thermocouple 1 is inserted into the mixture block 3, and finally the crucible 5 is sealed with a platinum cover 1.

[0020] Vapor transport equilibrium (VTE) technique is a mass transport process, so there should be enough Li in the crucible 2 O supply. And the gas phase transport balance depends on the Li 2 O keeps flowing from Li 2 SiO 2 and Li 2 O is maintained by volatilization in the mixed material, in order to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a blue crystal substrate, in particular to a compound blue crystal substrate and the manufacture method thereof. The compound blue crystal substrate comprises a blue crystal wafer (alpha-SiO2), and a layer of lithium silicate (gamma-Li2SiO2) compounded on the surface of the blue crystal wafer (alpha-SiO2). The invention is prepared through vapor transport equilibration technique; the compound blue crystal substrate (Li2SiO2 / alpha-SiO2) overcomes the disadvantages of high price, high hardness and processing difficulty of traditional blue crystal substrate (Li2AlO2 / alpha-Al2O3), and yield of scribing is about 90%.

Description

technical field [0001] The invention relates to a cyan crystal substrate, in particular to a composite cyan crystal substrate substrate and a preparation method thereof. Background technique [0002] At present, energy is becoming more and more scarce, and the situation of energy conservation is becoming more and more severe. So far, high-brightness sapphire / GaN LEDs have been widely used in indoor and outdoor lighting, and their production scale has expanded rapidly. However, in the process of production and application, the cost of sapphire / GaN LED is too high, and the hardness is too hard to affect the cutting problem, which has become one of the bottlenecks hindering its development. The final thickness of the sapphire substrate of the sapphire / GaN electrode sheet is 80-100um, which must be ground, thinned and polished. Since the sapphire crystal (a-Al 2 o 3 ) has a very high hardness, generally around 9 on the Mohs scale, second only to the hardest diamond, and it i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02
Inventor 王元成王丽娜
Owner ZHEJIANG SINGBEE LIGHTING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products