Silicon slice edge exposure system and its light intensity control method

Abstract

The invention provides a silicon wafer edge exposing system and a light intensity control method thereof, wherein the system comprises a rotatable silicon wafer bearing stage, an exposing light sourceand optical fiber, an imaging lens, a control computer and a light intensity control device; the method comprises the following steps that: through setting the position of a light sieve, the light intensity control device can calibrate exposing light intensity; the constant output of light intensity is controlled through the internal light intensity closed-loop feedback of the light source; through detecting the position of the light sieve, whether calibration is needed once more is judged; an exposing light source switch and the rotation time of a silicon wafer rotary stage are controlled through the calibrated data of light intensity. Adopting the system and the method can realize ladder-type constant output of light intensity, thereby making full use of the intensity of a mercury lamplight source and ensuring the constant output of light intensity within a certain time; meanwhile, the invention increases the efficiency and reliability of silicon wafer edge exposing process; in addition, the invention obtains the effect that a plurality of sets of silicon wafer edge exposing systems uses a set of photometric system; moreover, the invention further provides a simplified light intensity control device, thereby saving equipment cost.

Description

technical field [0001] The invention relates to an ultraviolet light exposure system, in particular to a silicon chip edge exposure system in semiconductor photolithography equipment and a light intensity control method thereof. Background technique [0002] In the semiconductor photolithography process, due to transmission and other reasons, the silicon wafer coated with photoresist often causes the photoresist on the edge of the silicon wafer to fall off, pollute, etc. These phenomena will have various effects on the subsequent process, resulting in chip defects. . Therefore, the photoresist at the edge of the silicon wafer needs to be removed. [0003] In the post-packaging of integrated circuits, the electroplating process is one of the important process steps. It uses the edge of the silicon wafer as the anode, and the electroplating window in the middle of the silicon wafer as the cathode, and then adds a certain DC working voltage between the cathode and anode. Throu...

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve the problem that it is difficult to accurately measure the exposure light intensity and precisely control the exposure dose in the traditional silicon wafer edge exposure system

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