Making method for low-temperature multi-crystal silicon film

A technology of low-temperature polysilicon and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of uneven size of polysilicon grains, uncontrollable position of polysilicon grains, etc., and achieves large size and high performance. Uniform, performance-enhancing effect

Inactive Publication Date: 2008-08-06
INNOCOM TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In order to overcome the problems that the prior art low-temperature polysilicon thin film manufacturing method cannot control the position of polysilicon grains, and the size of polysilicon grains is small and

Method used

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  • Making method for low-temperature multi-crystal silicon film
  • Making method for low-temperature multi-crystal silicon film
  • Making method for low-temperature multi-crystal silicon film

Examples

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Example Embodiment

[0018] Please refer to Figure 5 to Figure 11 , Which is a schematic diagram corresponding to each step of the preferred embodiment of the low-temperature polysilicon film manufacturing method of the present invention. The low-temperature polysilicon film manufacturing method mainly includes the following steps:

[0019] 1. Provide a substrate and form a buffer layer on it;

[0020] See Figure 5 First, a substrate 200 is provided. The substrate 200 is a glass substrate or a plastic substrate. A buffer layer 201 is formed on the substrate 200. The buffer layer 201 is a silicon nitride layer or a silicon oxide layer, or a multilayer structure including a silicon nitride layer and a silicon oxide layer. The buffer layer 201 is used to prevent substances in the substrate 200 from diffusing in subsequent processes and affecting the quality of the produced low-temperature polysilicon film.

[0021] 2. Form the first amorphous silicon layer;

[0022] See Figure 6 A first amorphous sili...

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Abstract

The invention provides a manufacturing method for a low temperature polycrystalline silicon thin film, which includes the following steps that: a substrate is provided, and a buffer layer is formed on the substrate; a first amorphous silicon thin film is deposited on the buffer layer; the first amorphous silicon thin film is etched by the lithography/etching process, and a plurality of scattered amorphous silicon particles are kept on the buffer layer; a second amorphous silicon thin film which covers the amorphous silicon particles is deposited on the buffer layer; a recrystallization process is applied to the second amorphous silicon thin film, which makes the second amorphous silicon thin film recrystallized by taking the plurality of amorphous silicon particles as crystal seeds after the second amorphous silicon thin film is melted, forming the polycrystalline silicon thin film.

Description

technical field [0001] The invention relates to a method for manufacturing a low-temperature polysilicon film. Background technique [0002] In the manufacturing process of Thin Film Transistor Liquid Crystal Display (TFT-LCD), the application of Low Temperature Polysilicon TFT (LowTemperature PolySilicon TFT, LTPS-TFT) has become the mainstream. Compared with the traditional amorphous silicon thin film transistor (Amorphous-Silicon Thin film Transistor, a-Si TFT), the low-temperature polysilicon thin film transistor has a higher electron mobility, and its electron mobility can reach more than 200cm2 / V-sec, so LTPS- TFT can be made smaller. LTPS-TFT is used as a pixel switch control element in an active matrix liquid crystal display, which can increase the switching speed, increase the aperture ratio of the pixel, increase the brightness of the liquid crystal display and reduce the energy consumption of the liquid crystal display. In addition, due to the high electron mobi...

Claims

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Application Information

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IPC IPC(8): H01L21/20
Inventor 叶冠华吴宏基黄荣龙
Owner INNOCOM TECH SHENZHEN
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