Thin film transistor device, method of manufacturing the same, and display apparatus
A thin-film transistor, thick and thin technology, applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve the problems of increased cut-off current and inability to obtain transistor characteristics, etc., to reduce leakage, reduce contact resistance, and improve The effect of pressure resistance
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Example Embodiment
[0032] Embodiment 1
[0033] The specific embodiments of the present invention will be described in detail below with reference to the drawings. The thin film transistor device of the embodiment of the present invention constitutes a TFT array (TFT array) substrate 1. FIG. 1 is a schematic plan view showing the structure of the TFT array substrate 1 of this embodiment. The TFT array substrate 1 has a display area 2 and a frame area 3 provided to surround the display area 2. In this display area 2, a plurality of gate signal lines 4 and a plurality of source signal lines 5 are formed. The plurality of gate signal lines 4 are respectively arranged in parallel. Similarly, a plurality of source signal lines 5 are respectively arranged in parallel. In addition, the gate signal line 4 and the source signal line 5 are orthogonal. The area surrounded by the gate signal line 4 and the source signal line 5 becomes the pixel 6. That is, on the TFT array substrate 1, the pixels 6 are arranged...
Example Embodiment
[0051] Embodiment 2
[0052] The display device according to Embodiment 2 is explained with reference to FIG. 7. FIG. 7 is a cross-sectional view of the TFT device of the second embodiment. In the TFT device of the second embodiment shown in FIG. 7, the same components as those of the first embodiment shown in FIG. 2 and FIG. 3 are given the same reference numerals, and detailed descriptions thereof are omitted.
[0053] In the TFT device shown in FIG. 7, the difference from Embodiment 1 shown in FIG. 2 and FIG. 3 is: the upper electrode 20 having the holding capacitor portion formed on the same layer as the gate electrode 16; The gate insulating film 15 has a laminated film of the metal film 14 and the polysilicon film 13 on the lower electrode facing the upper electrode 20 of the storage capacitor portion.
[0054] Hereinafter, the method of manufacturing the TFT device of this embodiment will be described in detail. The detailed manufacturing method of the TFT device common to ...
Example Embodiment
[0059] Embodiment 3
[0060] The TFT device of Embodiment 3 will be described with reference to FIGS. 3(a) and 8. The TFT device shown in FIG. 8 is different from the TFT device of Embodiment 1 shown in FIGS. 2 and 3 in that it has an upper insulating film 21 formed on the interlayer insulating film 17; The pixel electrode 23 on the insulating film 21; has an upper contact hole 22 for connecting the pixel electrode 23 and the metal film 14.
[0061] That is, in the TFT device shown in FIG. 3(a), the interlayer insulating film 17 and the gate insulating film 15 are etched so as to reach the metal film 14 formed on the source region 13a to form the contact hole 18. . A wiring electrode 19 connected to the source region 13 a or the drain region 13 b via the metal film 14 is formed on the interlayer insulating film 17. The upper insulating film 21 is formed of a silicon oxide film, a silicon nitride film, or the like by, for example, a CVD method. Alternatively, a resin film or the li...
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