Method for improving MOSFET anti-single particle radiation and MOSFET component

A technology for anti-single particle radiation and devices, which is applied in the manufacture of semiconductor devices, electric solid devices, semiconductor/solid devices, etc., can solve problems such as increased leakage current, not an anti-irradiation method, and weakened STI isolation ability, etc., to achieve Realize the effect of simple process and suppression of micro-dose effect
CN101266972AInactive Publication Date: 2008-09-17PEKING UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
PEKING UNIV
Publication Date
2008-09-17
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a method for enhancing anti-single particle radiation ability of MOSFET and a MOSFET element, belonging to field effect transistor technology field. In the MOSFET element according to the invention, an acute angle between the side wall of channel in STI region and the active region of the element is defined as the angle of micro-dosage effect caused by the anti-single particle radiation of the element, with value ranged between 78 degrees to 86 degrees. By using the MOSFET element structure according to the invention, the off-state leakage current of the element caused by the single-particle radiation is lower than that the traditional structure by one magnitude. The structure according to the invention has simple process, completely compatible with traditional CMOS process, capable of enhancing the anti-single particle radiation ability of the element and effectively reducing the manufacturing costs simultaneously.
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Description

technical field

[0001] The invention relates to a MOSFET device in the field of field effect transistor (MOSFET-Metal Oxide Silicon Field Effect Transistor, MOSFET for short), in particular to a method for improving the MOSFET's anti-single particle irradiation and a MOSFET device. Background technique

[0002] In the standard MOSFET process, as the feature size of the device decreases, the shallow trench isolation structure (STI) gradually replaces the local oxidation isolation structure (LOCOS) and becomes the mainstream isolation structure. According to the requirements of the International Semiconductor Technology Roadmap (ITRS), the sharp angle between the sidewall of the STI trench and the upper surface of the active region of the device should be as steep as possible. Therefore, according to the ITRS updated in 2006, for the MOSFET process in 2008, the value of the acute angle between the sidewall of the STI trench and the upper surface of the active region of the dev...

Claims

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