Organic film transistor and its making method

Abstract

The invention relates to an organic thin-film transistor and the making method, wherein the organic thin-film transistor comprises a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode, the organic thin-film transistor also comprises an organic modification insulation layer which is located on the surface of the gate insulation layer. The organic thin-film transistor of the invention uses the organic modification insulation layer to modify the gate insulation layer properly, and the organic thin-film transistor can provide good contact surface for N-type thin-film transistor, and reduce the interface by which electron are limited in the active layer and the gate insulation layer, and reduce hydroxyl density, then enhance transmission capacity of the electron in channel, and can improve stability of the organic thin-film transistor in atmospheric environment.

Description

【Technical field】 [0001] The invention relates to a thin film transistor and its manufacturing method, especially to an N-type organic thin film transistor and its manufacturing method. 【Background technique】 [0002] The traditional inorganic transistor is a metal oxide semiconductor (MOS) type field effect transistor, and its semiconductor material is generally inorganic silicon. Organic thin film transistors (OTFT) are also called plastic transistors. The biggest difference from MOS transistors is that OTFT uses organic semiconductor materials instead of inorganic semiconductor materials in MOS. [0003] Compared with inorganic transistors, organic thin film transistors have the following main advantages: there are more and newer film-forming technologies for organic thin films, such as Langmuir-Blodgett (LB) technology, molecular self-assembly technology, vacuum evaporation, inkjet printing, etc., thus The manufacturing process is simple, diverse, and low-cost; the size...

AI Technical Summary

Problems solved by technology

[0006] However, in organic thin film transistors, most of the organic semiconductor materials are P materials. At present, P-type organic transistors have higher carrier mobility and less N-type materials. It is necessary to find N-type materials with comparable carrier mobility and Not much, in addition, the current common N-type organic semiconductor materials are easily affected by water vapor or oxygen when operating in the air, resulting in poor electrical properties of the device and a relatively short life

Therefore, most of the current N-type organic thin film transistors must be operated in nitrogen or vacuum, which limits the further development of organic transistors.

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