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Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal

A zinc cadmium tellurium and annealing technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of increasing industrial cost and technical difficulty, to avoid local inhomogeneity, reduce crystal growth temperature, and avoid heat concentrated effect

Inactive Publication Date: 2010-12-22
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

This document uses the reaction of ZnTe and CdTe to generate Zn 1-x Cd x Te polycrystalline material, this synthesis method requires a special high-temperature furnace to synthesize Zn 1-x Cd x Te solid solution virtually increases industrial cost and technical difficulty

Method used

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  • Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal
  • Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal

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Embodiment Construction

[0022] The best component of Cd is Zn 0.95 Cd 0.05 Taking Te as an example, the specific implementation of the present invention will be further described in detail in conjunction with the accompanying drawings:

[0023] 1. Material synthesis

[0024] According to Zn 0.95 Cd 0.05 The molar ratio to Te is 3:7 and the materials are accurately weighed, and then high-purity (7N) Te, Cd and Zn simple substances are put into a quartz crucible, degassed and evacuated until the vacuum degree is higher than 5×10 -4 Seal the tube at Pa.

[0025] Put the sealed quartz crucible into a horizontal swing furnace for synthesis, and raise the temperature of the furnace to the synthesis temperature of 1080°C, which is higher than that of Zn 0.95 Cd 0.05 The melting point of Te compound is 20°C. Observing and monitoring the furnace temperature instrument, it is found that when the furnace temperature rises to 400°C-530°C, there will be a severe exothermic peak, and the heat generated will...

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Abstract

The invention discloses a generation and anneal method of ZnCdTe monocrystal and special pot for anneal. The method uses three-element solid melting body Zn1-xCdxTe phase regulation, accomplishes purpose of reducing generation temperature of the crystal in great extend by saturated solution of Zn1-xCdxTe solid melting body at lower temperature by tellurium-rich solvent. Synthesis of the Zn1-xCdxTe is accomplished in the tellurium-rich solvent. After adequate swinging evenly, local unevenness of Cd component is avoid and problem that local heat concentration and non-dissipation when synthesizing pure Zn1-xCdxTe. Te impurities in late generation period in the crystal is eliminated by two step anneal process, which overcomes adverse factors of tellurium solvent generated crystal and further improves quality of the crystal. The special pot for anneal is in a capsule structure with telescope neck at bottom of the pot. A zinc rod is put into the capsule and the monocrystal piece is put on the capsule. The capsule is provided with the telescope neck, which prevents the monocrystal from sliding into the capsule.

Description

technical field [0001] The invention belongs to the field of single crystal growth of II-VI compound semiconductors. Specifically referring to Zn for THz generators and detectors 1-X Cd X Synthesis of Te crystal materials, single crystal growth and annealing methods, and special crucibles for annealing. Background technique [0002] THz (10 12 Hz) refers to the frequency range from 0.1THz to 10THz (wavelength 30μm-3mm), the electromagnetic wave region between infrared light and microwave, and belongs to the far infrared band. Commonly used electro-optic crystals for THz generators and detectors are ZnTe, ZnSe, CdTe, LiTaO 3 , LiNbO 3 and organic crystal DAST et al. ZnTe, ZnSe and CdTe crystals belong to II-VI group semiconductor materials. Due to the second-order nonlinear coefficient of ZnTe (X (2) =1.6×10 -7 esu) and electro-optic coefficient (γ 41 =4.04pm / V) are large; and the ZnTe crystal in the <110> direction has the best phase matching under the action...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B11/02C30B33/02C30B35/00
Inventor 王仍方维政赵培张雷袁诗鑫张惠尔胡淑红戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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