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Pressure welding method of large-area target material

A pressure welding, large-area technology, used in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve problems such as reducing production costs, and achieve the effects of short welding time, high bonding strength, and low processing requirements.

Active Publication Date: 2010-08-04
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the deficiencies in the prior art, the present invention particularly provides a pressure welding method for a large-area target, which can realize a tight and reliable connection between the target and the back plate in the atmospheric environment, and at the same time prevent pollution, avoiding the connection forming problem that must be in vacuum, high temperature or high pressure environment, and reducing production costs

Method used

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  • Pressure welding method of large-area target material

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Welding of high-purity Ti target and 6061Al alloy back plate. The Ti target with a purity of 4N5 has a diameter of 350 mm and a thickness of 15 mm. The surface roughness Rz of the target surface to be welded is about 100 μm by sandblasting. The back plate is made of 6061Al alloy, with a diameter of 380mm and a thickness of 20mm. figure 2 The angle α between the conical surface 2a shown and the horizontal plane is 3°, and 2b is a small platform in the center, which is mainly used to place the target on it; the surface of the target and the back plate is cleaned with clean water with decontamination powder After ultrasonic cleaning to remove oil, clean the surface of the target and the back plate to be welded with absolute ethanol, and finally dry the surface; heat the back plate to 400°C, keep it warm for 30 minutes, and place the unheated target on the heated back On the board, apply a pressure of 100MPa to fully deform the curved surface of the backplane, such as i...

Embodiment 2

[0035] Welding of high-purity Cu target and 6061Al alloy backplane.

[0036] The raw material of the 6N Cu target is a circular plate with a diameter of 350 mm and a thickness of 15 mm. The surface roughness Rz of the target surface to be welded is about 200 μm through turning. The back plate is 6061 Al alloy with a diameter of 380 mm and a thickness of 20 mm. figure 2As shown in the cone surface 2a, the angle α between it and the horizontal plane is 1°, and 2b is the center platform, which is mainly for placing the target on it; the surface of the target and the back plate are cleaned and then dried; the back plate is heated to 450°C, keep warm for 30 minutes, place the unheated Cu target on the heated aluminum backing plate, and apply a pressure of 150 MPa to fully deform the curved surface of the backing plate until the surfaces 2a and 2b of the backing plate and the surface of the target 1a are occluded together; The clamp made of GH130 alloy steel is used to clamp the pr...

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Abstract

The invention relates to a pressure welding method for large-area target which belongs to the welding field of metallic materials, and the method comprises the following steps that: (1) a roughening treatment is applied to the surface to be welded of the target; (2) the surface to be welded of a backplane is processed into a non-planar structure; (3) the surfaces to be welded of the target and backplane are washed and dried: (4) the backplane is heated and the preheated target or target at normal temperature is placed on the backplane and pressed, so as to deform the curved surface of the backplane till a bonding between two surfaces to be welded is achieved by pressing; (5) the target and the backplane are heated to the temperature which is 0.50 to 0.85 time of the melting point of one with lower melting point in the both and welded under the condition of heat insulation after being clamped tightly. The method has low processing requirement for the equipment and the surface to be welded and can ensure that no oxygen problem exists between the large-area target and the surface to be welded of the backplane, the air around the contacting surface between the target and the backplaneis completely discharged, firm bonding between the target and the backplane is realized in the atmosphere environment, simultaneously the microstructure performance of the target is not affected and problems of severe deformation, etc do not happen to the bonding surface between the target and the backplane.

Description

technical field [0001] The invention belongs to the field of metal material welding, in particular to a pressure welding method for a large-area target. Background technique [0002] Sputtered thin film materials are widely used in related industries such as electronic information, storage records, and displays. At the same time, with the development of these industries, the demand for sputtering targets is also increasing year by year. The quality of the target has an important influence on the performance of the sputtering film, especially the preparation of semiconductor integrated circuit chips is developing towards a large size (8, 12 or even 18 inches), the size of the sputtering target and the sputtering power will also vary with With the increase of the sputtering target, the requirements for the purity of the sputtering target, the microstructure and the connection between the target and the backplane are also getting higher and higher. The connection technology o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/24B23K20/02
Inventor 何金江王欣平陈明郭力山
Owner GRIKIN ADVANCED MATERIALS
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