Method for preparing large scale nonpolar surface GaN self-supporting substrate
A technology of self-supporting substrates and non-polar surfaces, applied in chemical instruments and methods, from chemically reactive gases, semiconductor/solid-state device manufacturing, etc., can solve poor crystal quality, cannot guarantee self-supporting GaN substrate materials, etc. problem, achieve high yield, improve crystal quality, and facilitate mass production
Inactive Publication Date: 2008-10-08
NANJING UNIV
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However, the yield rate needs to be improved, and it cannot be guaranteed that the same process can obtain a complete large-size self-supporting GaN substrate material, and the sample needs to be cooled according to a certain cooling rate from high temperature to room temperature, and the crystal quality is poor
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[0012] The technical implementation process of the present invention comprises the following steps:
[0013] Put the cleaned lithium aluminate substrate into the reactor and then raise the temperature to the temperature of the buffer layer to grow the buffer layer first. The temperature is 500-800° C., 650° C. is taken in this embodiment. The gas flows are: NH 3 The flow rate is 500-1500sccm, NH 3 The carrier gas flow rate is 500 sccm, the HCl flow rate is 10-20 sccm, the HCl carrier gas flow rate is 200 sccm, and the total nitrogen gas is 2000-3000 sccm. The growth time is 30-120 seconds.
[0014] After heating up to the growth temperature in the reactor, GaN growth begins. The growth temperature is 1000~1050℃. Gas flow respectively: NH 3 The flow rate is 500-2000sccm, NH 3 The flow rate of carrier gas is 500 sccm, the flow rate of HCl is 10-50 sccm, the flow rate of HCl carrier gas is 200 sccm (the reaction of metal gallium and HCl carrier gas is used as gallium sourc...
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Abstract
A method for preparing large size non-polar surface GaN self-supporting substrate includes steps of that: laying a lithium aluminate substrate into a reactor in a HVPE growth system to grow cushioning layer with temperature of 500-800 DEG C; raising temperature to a growth temperature of 1000-1100 DEG C to grow GaN; stopping growth after growing to appropriate thickness; obtaining complete self-supporting GaN substrate after cooling, wherein the lithium aluminate substrate is automatically separated. The method utilizes small crystal lattice mismatch between the lithium aluminate substrate and the GaN to obtain a non-polar surface GaN thin film with low dislocation density; the method also utilizes large heat mismatch between the lithium aluminate substrate and the GaN to separate the two without need of certain cooling rate, so that the method has advantages of obviously improved crystal quality, high rate of finished products and is favorable to scale production.
Description
1. Technical field [0001] The invention relates to a method for growing high-quality and large-size non-polar surface GaN substrate material on a (100) lithium aluminate (LiAlO2) substrate by using a hydride vapor phase epitaxy method. 2. Background technology [0002] Group III-V nitride materials (also known as GaN-based materials) based on GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have received much attention in the world in recent years. They are short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage , The most preferred material for the preparation of high temperature microelectronic devices. [0003] Due to the limitations of the physical properties of GaN itself, the growth of GaN bulk single crystal is very difficult and has not been put into practical use. Due to the lack of bulk single crystals, GaN thin films are mainly obtained by heteroepitaxy. The most commonly used substrate material is sapphir...
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IPC IPC(8): H01L21/205C30B25/18C30B29/40C30B29/38
Inventor 修向前张荣谢自力陆海郑有炓顾书林施毅韩平朱顺明胡立群
Owner NANJING UNIV