Fabricating method for semiconductor device
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of decreased stability and poor electrical performance of semiconductor devices, and achieve enhanced adhesion, improved electrical properties and stability. performance, the effect of eliminating the defect of metal barrier peeling
Inactive Publication Date: 2010-08-11
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] However, the above-mentioned manufacturing method can cause the defect of peeling (Peeling) between the metal barrier layer 14a and the surface of the dielectric layer 11 and the contact plug 13, which causes the electrical performance of the semiconductor device to deteriorate and the stability to decrease; as shown in Figure 5 Schematic diagram of the metal barrier exfoliation defect 16 shown
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0048] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0049] In the manufacturing process of the semiconductor device, the metal interconnection lines of the rear section and the transistors of the front section are electrically connected through contact plugs, and the metal interconnection lines of different layers at the rear section are connected through the connection plugs. After the chemical mechanical polishing of the contact plug or the connection plug is completed, an electron beam is required to detect defects. However, after electron beam scanning, the adhesion between the surface of the dielectric layer and the metal barrier layer of the metal interconnection, and the adhesion between the surface of the contact plug or the connection plug and the metal barrier layer will deteriorate, which will cause the metal barrier layer to peel off. The defects affect the electrical properties and ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a manufacturing method for a semiconductor device; the method comprises the following steps: a semiconductor substrate with a dielectric layer is provided; the dielectric layer is provided with a conductive plug; the surface of the dielectric layer and the surface of the conductive plug carry out the plasma processing; a metal layer is formed on the dielectric layer and the conductive plug; a second metal layer is formed on the first metal layer, and then is patterned so as to form a metal interconnection line; the first metal layer which is not covered by the metal interconnection line is removed so as to form a metal blocking layer. The invention can improve adhesiveness between the surface of the dielectric layer and the metal blocking layer and between the surface of a contact plug or a connecting plug and the metal blocking layer.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a manufacturing method of a semiconductor device. Background technique [0002] In the semiconductor manufacturing process, aluminum metal is used as a metal interconnection material in the manufacture of semiconductor integrated circuits due to its low resistivity, good adhesion with silicon dioxide and other dielectric materials, and easier etching. The metal interconnection line made of aluminum is formed by depositing an aluminum metal layer on the dielectric layer, and through photolithography and etching processes. In order to prevent the aluminum in the metal interconnection line from diffusing into the dielectric layer, it is often necessary to form a metal barrier layer between the metal interconnection line and the dielectric layer. The metal barrier layer may be titanium, tantalum, titanium, and titanium nitride. One of tantalum and tantalum...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 胡建强苏凤莲苏婕季春葵李冠华
Owner SEMICON MFG INT (SHANGHAI) CORP